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LM5102SDX Datasheet(PDF) 1 Page - National Semiconductor (TI) |
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LM5102SDX Datasheet(HTML) 1 Page - National Semiconductor (TI) |
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1 / 13 page  LM5102 High Voltage Half-Bridge Gate Driver with Programmable Delay General Description The LM5102 High Voltage Gate Driver is designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The float- ing high-side driver is capable of working with supply volt- ages up to 100V. The outputs are independently controlled. The rising edge of each output can be independently de- layed with a programming resistor. An integrated high volt- age diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from control logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. This device is available in the standard MSOP-10 pin and the LLP-10 pin packages. Features n Drives both a high side and low side N-channel MOSFET n Independently programmable high and low side rising edge delay n Bootstrap supply voltage range up to 118V DC n Fast turn-off propagation delay (25 ns typical) n Drives 1000 pF loads with 15 ns rise and fall times n Supply rail under-voltage lockout n Low power consumption n Timer can be terminated midway through sequence Typical Applications n Current Fed push-pull power converters n Half and Full Bridge power converters n Synchronous Buck converters n Two switch forward power converters n Forward with Active Clamp converters Package n MSOP-10 n LLP-10 (4 mmx4mm) Simplified Block Diagram 20088902 FIGURE 1. January 2004 © 2004 National Semiconductor Corporation DS200889 www.national.com |
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