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IDT7008S35PFI Datasheet(PDF) 9 Page - Integrated Device Technology |
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IDT7008S35PFI Datasheet(HTML) 9 Page - Integrated Device Technology |
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9 / 19 page  6.42 IDT7008S/L High-Speed 64K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges 9 AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(6,7) NOTES: 1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranted by device characterization, but is not production tested. 3. To access RAM, CE= VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. 4. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE= VIH and SEM = VIL. 5. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 6. 'X' in part numbers indicates power rating (s or L). 7. Industrial Temperature: for other speeds, packages and powers contact your sales office. AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(6,7) 7008X20 Com'l Only 7008X25 Com'l & Military 7008X35 Com'l & Military 7008X55 Com'l, Ind & Military Unit Symbol Parameter Min.Max.Min.Max. Min.Max.Min.Max. READ CYCLE tRC Read Cycle Time 20 ____ 25 ____ 35 ____ 55 ____ ns tAA Address Access Time ____ 20 ____ 25 ____ 35 ____ 55 ns tACE Chip Enable Access Time (4) ____ 20 ____ 25 ____ 35 ____ 55 ns tAOE Output Enable Access Time ____ 12 ____ 13 ____ 20 ____ 30 ns tOH Output Hold from Address Change 3 ____ 3 ____ 3 ____ 3 ____ ns tLZ Output Low-Z Time(1,2) 3 ____ 3 ____ 3 ____ 3 ____ ns tHZ Output High-Z Time (1,2) ____ 12 ____ 15 ____ 15 ____ 25 ns tPU Chip Enab le to Power Up Time (2) 0 ____ 0 ____ 0 ____ 0 ____ ns tPD Chip Disable to Power Down Time (2) ____ 20 ____ 25 ____ 35 ____ 50 ns tSOP Semaphore Flag Update Pulse ( OE or SEM)10 ____ 12 ____ 15 ____ 15 ____ ns tSAA Semaphore Address Access Time ____ 20 ____ 25 ____ 35 ____ 55 ns 3198 tbl 12 Symbol Parameter 7008X20 Com'l Only 7008X25 Com'l & Military 7008X35 Com'l & Military 7008X55 Com'l, Ind & Military Unit Min. Max. Min. Max. Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 20 ____ 25 ____ 35 ____ 55 ____ ns tEW Chip Enable to End-of-Write(3) 15 ____ 20 ____ 30 ____ 45 ____ ns tAW Address Valid to End-of-Write 15 ____ 20 ____ 30 ____ 45 ____ ns tAS Address Set-up Time(3) 0 ____ 0 ____ 0 ____ 0 ____ ns tWP Write Pulse Width 15 ____ 20 ____ 25 ____ 40 ____ ns tWR Write Recovery Time 0 ____ 0 ____ 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 15 ____ 15 ____ 15 ____ 30 ____ ns tHZ Output High-Z Time(1,2) ____ 12 ____ 15 ____ 15 ____ 25 ns tDH Data Hold Time(5) 0 ____ 0 ____ 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 12 ____ 15 ____ 15 ____ 25 ns tOW Output Active from End-of-Write(1,2,5) 0 ____ 0 ____ 0 ____ 0 ____ ns tSWRD SEM Flag Write to Read Time 5 ____ 5 ____ 5 ____ 5 ____ ns tSPS SEM Flag Contention Window 5 ____ 5 ____ 5 ____ 5 ____ ns 3198 tbl 13 |
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