2

ELM36405EA-S

4 -

■Electrical characteristics

Parameter

Symbol

Condition

Min. Typ. Max. Unit Note

STATIC PARAMETERS

Drain-source breakdown voltage

BVdss Vgs=0V, Id=-250μA

-20

V

Zero gate voltage drain current

Idss

Vds=-16V, Vgs=0V

-1

μA

Vds=-16V, Vgs=0V, Ta=125°C

-10

Gate-body leakage current

Igss Vds=0V, Vgs=±12V

±100 nA

Gate threshold voltage

Vgs(th) Vds=Vgs, Id=-250μA

-0.45 -0.80 -1.20 V

On state drain current

Id(on) Vgs=-10V, Vds=-5V

-20

A

1

Static drain-source on-resistance

Rds(on)

Vgs=-4.5V, Id=-5A

37

44

mΩ

1

Vgs=-2.5V, Id=-4A

55

70

mΩ

Vgs=-1.8V, Id=-2A

75

100 mΩ

Forward transconductance

Gfs Vds=-5V, Id=-5A

14

S

1

Diode forward voltage

Vsd Is=-1A, Vgs=0V

-1

V

1

Max. body-diode continuous current

Is

-3

A

Pulsed body-diode current

Ism

-6

A

3

DYNAMIC PARAMETERS

Input capacitance

Ciss

Vgs=0V, Vds=-10V, f=1MHz

1100

pF

Output capacitance

Coss

170

pF

Reverse transfer capacitance

Crss

140

pF

SWITCHING PARAMETERS

Total gate charge

Qg

Vgs=-4.5V, Vds=-10V

Id=-5A

12.5

nC

2

Gate-source charge

Qgs

2.1

nC

2

Gate-drain charge

Qgd

3.5

nC

2

Turn-on delay time

td(on)

Vgs=-4.5V, Vds=-10V

Id=-1A, Rgen=3Ω

7

ns

2

Turn-on rise time

tr

10

ns

2

Turn-off delay time

td(off)

30

ns

2

Turn-off fall time

tf

22

ns

2

Body diode reverse recovery charge

Qrr

20

nC

Single P-channel MOSFET

NOTE :

1. Pulsed width≤300μsec and Duty cycle≤2%.

2. Independent of operating temperature.

3. Pulsed width limited by maximum junction temperature.

4. Duty cycle ≤ 1%.

Ta=25°C. Unless otherwise noted.