5

ELM34608AA-N

7 -

■Electrical Characteristics (P-ch)

Parameter

Symbol

Conditions

Min. Typ. Max. Unit Note

STATIC PARAMETERS

Drain-source breakdown voltage

BVdss Id=-250μA, Vgs=0V

-60

V

Zero gate voltage drain current

Idss

Vds=-48V, Vgs=0V

-1

μA

Vds=-40V, Vgs=0V, Ta=55°C

-10

Gate-body leakage current

Igss Vds=0V, Vgs=±20V

±100 nA

Gate threshold voltage

Vgs(th) Vds=Vgs, Id=-250μA

-1.0

-1.5

-2.5

V

On state drain current

Id(on) Vgs=-10V, Vds=-5V

-20

A

1

Static drain-source on-resistance

Rds(on)

Vgs=-10V, Id=-3.5A

70

90

mΩ

1

Vgs=-4.5V, Id=-3A

100

135

Forward transconductance

Gfs Vds=-5V, Id=-3.5A

9

S

1

Diode forward voltage

Vsd If=Is=-1.3A, Vgs=0V

-1

V

1

Max.body-diode continuous current

Is

-1.3

A

Pulsed current

Ism

-2.6

A

3

DYNAMIC PARAMETERS

Input capacitance

Ciss

Vgs=0V, Vds=-30V, f=1MHz

630

pF

Output capacitance

Coss

81

pF

Reverse transfer capacitance

Crss

33

pF

SWITCHING PARAMETERS

Total gate charge

Qg

Vgs=-10V, Vds=-30V

Id=-3.5A

11.0 15.0 nC

2

Gate-source charge

Qgs

2.1

nC

2

Gate-drain charge

Qgd

2.5

nC

2

Turn-on delay time

td(on)

Vgs=-10V, Vds=-30V

Id=-1A, Rgen=6Ω

6

13

ns

2

Turn-on rise time

tr

8

18

ns

2

Turn-off delay time

td(off)

17

31

ns

2

Turn-off fall time

tf

11

20

ns

2

Complementary MOSFET

NOTE :

1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.

2. Independent of operating temperature.

3. Pulsed width limited by maximum junction temperature.

Ta=25°C. Unless otherwise noted.