FLASH MEMORY

1

K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0

K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0

K9K2G08U0M-YCB0,YIB0,PCB0,PIB0

K9K2G16U0M-YCB0,YIB0,PCB0,PIB0

K9K2G08U0M-VCB0,VIB0,FCB0,FIB0

Document Title

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you

have any questions, please contact the SAMSUNG branch office near your office.

Revision No

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Remark

Advance

History

1. Initial issue

-min. Value: 7mA -->3mA

-typ. Value: 8mA -->4mA

1. 5th cycle of ID is changed

: 40h --> 44h

1. Add WSOP Package Dimensions.

1. Max Icc value of 1.8V/3.3V device is changed.

- Max. value Icc1,Icc2,Icc3: 20mA --> 30mA (3.3V device)

- Max. value Icc1,Icc2,Icc3: 15mA --> 20mA (1.8V device)

1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)

2. Add the data protection Vcc guidence for 1.8V device - below about

1.1V. (Page 36)

The min. Vcc value 1.8V devices is changed.

K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V

Pb-free Package is added.

K9K2G08U0M-FCB0,FIB0

K9K2G08Q0M-PCB0,PIB0

K9K2G08U0M-PCB0,PIB0

K9K2G16U0M-PCB0,PIB0

K9K2G16Q0M-PCB0,PIB0

Errata is added.(Front Page)-K9K2GXXQ0M

tWC tWP tWH tRC tREH tRP tREA tCEA

Specification

45

25

15

50

15

25

30

45

Relaxed value

80

60

20

60

80

60

60

75

1. The 3rd Byte ID after 90h ID read command is don’t cared.

The 5th Byte ID after 90h ID read command is deleted.

1. Added Addressing method for program operation

Draft Date

Sep. 19.2001

Nov. 5. 2001

Jan. 23.2002

May. 29.2002

Sep. 12.2002

Nov. 22.2002

Mar. 6.2003

Mar. 13.2003

Mar. 17.2003

Apr. 9. 2003

Jan. 27. 2004