K7R163684B-FC16 datasheet(9/18 Pages) SAMSUNG

Part #	K7R163684B-FC16

Description	512Kx36 & 1Mx18 QDR II b4 SRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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Rev 3.1

July. 2004

512Kx36 & 1Mx18 QDRTM II b4 SRAM

K7R163684B

K7R161884B

DC ELECTRICAL CHARACTERISTICS(VDD=1.8V ±0.1V, TA=0°C to +70°C)

Notes: 1. Minimum cycle. IOUT=0mA.

2. |IOH|=(VDDQ/2)/(RQ/5)

±15% for 175Ω ≤ RQ ≤ 350Ω.

3. |IOL|=(VDDQ/2)/(RQ/5)

±15% for 175Ω ≤ RQ ≤ 350Ω.

4. Minimum Impedance Mode when ZQ pin is connected to VDDQ.

5. Operating current is calculated with 50% read cycles and 50% write cycles.

6. Standby Current is only after all pending read and write burst opeactions are completed.

7. Programmable Impedance Mode.

8. These are DC test criteria. DC design criteria is VREF

±50mV. The AC VIH/VIL levels are defined separately for measuring

timing parameters.

9. VIL (Min)DC=

-0.3V, VIL (Min)AC=-1.5V(pulse width ≤ 3ns).

10. VIH (Max)DC=

VDDQ+0.3, VIH (Max)AC=VDDQ+0.85V(pulse width ≤ 3ns).

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNIT NOTE

Input Leakage Current

IIL

VDD=Max ; VIN=VSS to VDDQ

-2

+2

µA

Output Leakage Current

IOL

Output Disabled,

-2

+2

µA

Operating Current

(x36) : DDR

ICC

VDD=Max , IOUT=0mA

Cycle Time

≥ tKHKH Min

-30

-

550

mA

1,5

-25

-

500

-20

-

450

-16

400

Operating Current

(x18) : DDR

ICC

VDD=Max , IOUT=0mA

Cycle Time

≥ tKHKH Min

-30

-

450

mA

1,5

-25

-

400

-20

-

350

-16

300

Standby Current(NOP): DDR

ISB1

Device deselected,

IOUT=0mA, f=Max,

All Inputs

≤0.2V or ≥ VDD-0.2V

-30

-

260

mA

1,6

-25

-

240

-20

-

220

-16

-

200

Output High Voltage

VOH1

VDDQ/2-0.12

VDDQ/2+0.12

V

2,7

Output Low Voltage

VOL1

VDDQ/2-0.12

VDDQ/2+0.12

V

3,7

Output High Voltage

VOH2

IOH=-1.0mA

VDDQ-0.2

VDDQ

V4

Output Low Voltage

VOL2

IOL=1.0mA

VSS

0.2

V

4

Input Low Voltage

VIL

-0.3

VREF-0.1

V

8,9

Input High Voltage

VIH

VREF+0.1

VDDQ+0.3

V

8,10

ABSOLUTE MAXIMUM RATINGS*

*Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating

only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification

is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2. VDDQ must not exceed VDD during normal operation.

PARAMETER

SYMBOL

RATING

UNIT

Voltage on VDD Supply Relative to VSS

VDD

-0.5 to 2.9

V

Voltage on VDDQ Supply Relative to VSS

VDDQ

-0.5 to VDD

V

Voltage on Input Pin Relative to VSS

VIN

-0.5 to VDD+0.3

V

Storage Temperature

TSTG

-65 to 150

°C

Operating Temperature

TOPR

0 to 70

°C

Storage Temperature Range Under Bias

TBIAS

-10 to 85

°C

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