K4S641633H-L datasheet(6/12 Pages) SAMSUNG

Part #	K4S641633H-L

Description	1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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6 / 12 page

K4S641633H - R(B)E/N/G/C/L/F

February 2004

Mobile-SDRAM

AC OPERATING TEST CONDITIONS(VDD = 2.7V ∼ 3.6V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)

Parameter

Value

Unit

AC input levels (Vih/Vil)

2.4 / 0.4

V

Input timing measurement reference level

0.5 x VDDQ

V

Input rise and fall time

tr/tf = 1/1

ns

Output timing measurement reference level

0.5 x VDDQ

V

Output load condition

See Figure 2

VDDQ

1200

Ω

870

Ω

Output

30pF

VOH (DC) = 2.4V, IOH = -2mA

VOL (DC) = 0.4V, IOL = 2mA

Vtt=0.5 x VDDQ

50

Ω

Output

30pF

Z0=50

Ω

Figure 2. AC Output Load Circuit

Figure 1. DC Output Load Circuit

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K4S641633H-L Datasheet(PDF) 6 Page - Samsung semiconductor

K4S641633H-L Datasheet(HTML) 6 Page - Samsung semiconductor

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