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RU2 Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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RU2 Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Low cos t Diffus ed junction MECHANICAL DATA Cas e: JEDEC DO-15L, m olded plas tic Method 208 Mounting: Any Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. Maximum peak repetitive reverse voltage VRRM 200 600 800 1000 V Maximum RMS voltage VRMS 140 420 560 700 V Maximum DC blocking voltage VDC 200 600 800 1000 V Maximum average f orw ard rectif ied current 9.5mm lead length, @T A=75 Peak f orw ard surge current 10ms single half -sine-w ave superimplsed on rated load @T J=125 Maximum instantaneous f orw ard voltage @ I F=IF(AV) VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A =100 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJL /W Operating junction temperature range TJ Storage temperature range TSTG 2. Meas ured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 1.5 1.0 0.8 30.0 20.0 100 70 100 RU2Y - 55 ----- + 150 10.0 300.0 A A A 0.95 1.5 50 100 RU2YX RU2YX(Z) --- RU2C(Z) UNITS The plas tic m aterial carries U/L recognition 94V-0 Eas ily cleaned with freon, alcohol, ls opropand RU2C RU2B RU2 50 - 55 ----- + 150 HIGH EFFICIENCY RECT IFIERS VOLT AGE RANGE: 100--- 1000 V CURRENT : 1.5 --- 0.8 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DO - 15L Low leakage Low forward voltage drop IR Term inals : Axial leads ,s olderable per MIL-STD-202, 30 3. Therm al resistance junc tion am bient NOTE: 1. Meas ured with I F=0. 5A, I R=1A, I rr=0. 25A. Polarity: Color band denotes cathode Weight: 0.017 ounces , 0.48 gram s IFSM IF(AV) 15 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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