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RU2 Datasheet(PDF) 1 Page - Diode Semiconductor Korea

Part # RU2
Description  HIGH EFFICIENCY RECTIFIERS
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Manufacturer  DSK [Diode Semiconductor Korea]
Direct Link  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

RU2 Datasheet(HTML) 1 Page - Diode Semiconductor Korea

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FEATURES
Low cos t
Diffus ed junction
MECHANICAL DATA
Cas e: JEDEC DO-15L, m olded plas tic
Method 208
Mounting: Any
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Maximum peak repetitive reverse voltage
VRRM
200
600
800
1000
V
Maximum RMS voltage
VRMS
140
420
560
700
V
Maximum DC blocking voltage
VDC
200
600
800
1000
V
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A=75
Peak f orw ard surge current
10ms single half -sine-w ave
superimplsed on rated load
@T
J=125
Maximum instantaneous f orw ard voltage
@ I
F=IF(AV)
VF
V
Maximum reverse current
@T
A=25
at rated DC blocking voltage
@T
A =100
Maximum reverse recovery time
(Note1)
trr
ns
Typical junction capacitance
(Note2)
CJ
pF
Typical thermal resistance
(Note3)
RθJL
/W
Operating junction temperature range
TJ
Storage temperature range
TSTG
2. Meas ured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
1.5
1.0
0.8
30.0
20.0
100
70
100
RU2Y
- 55 ----- + 150
10.0
300.0
A
A
A
0.95
1.5
50
100
RU2YX
RU2YX(Z) --- RU2C(Z)
UNITS
The plas tic m aterial carries U/L recognition 94V-0
Eas ily cleaned with freon, alcohol, ls opropand
RU2C
RU2B
RU2
50
- 55 ----- + 150
HIGH EFFICIENCY RECT IFIERS
VOLT AGE RANGE: 100--- 1000 V
CURRENT : 1.5 --- 0.8 A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DO - 15L
Low leakage
Low forward voltage drop
IR
Term inals : Axial leads ,s olderable per MIL-STD-202,
30
3. Therm al resistance junc tion am bient
NOTE: 1. Meas ured with I
F=0. 5A, I R=1A, I rr=0. 25A.
Polarity: Color band denotes cathode
Weight: 0.017 ounces , 0.48 gram s
IFSM
IF(AV)
15
Dimensions in millimeters
www.diode.kr
Diode Semiconductor Korea


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