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RN1ZZ Datasheet(PDF) 1 Page - Diode Semiconductor Korea

Part # RN1ZZ
Description  HIGH EFFICIENCY RECTIFIERS
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Manufacturer  DSK [Diode Semiconductor Korea]
Direct Link  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

RN1ZZ Datasheet(HTML) 1 Page - Diode Semiconductor Korea

  RN1ZZ Datasheet HTML 1Page - Diode Semiconductor Korea RN1ZZ Datasheet HTML 2Page - Diode Semiconductor Korea  
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FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
MECHANICAL DATA
Case:JEDEC DO--15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
UNITS
Maximum recurrent peak reverse voltage
VRRM
Maximum RMS voltage
VRMS
Maximum DC blocking voltage
VDC
Maximum average forw ard rectified current
9.5mm lead length,
@T
A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J=125
Maximum instantaneous forw ard voltage
@ 1.5 A
VF
V
Maximum reverse current
@T
A=25
at rated DC blocking voltage @T
A=100
Maximum reverse recovery time
(Note1)
trr
ns
Typical junction capacitance
(Note2)
CJ
pF
Typical thermal resistance
(Note3)
RθJA
/W
Operating junction temperature range
TJ
Storage temperature range
TSTG
50
DO - 15
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
50
1000.0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
IFSM
60.0
200
RN1Z(Z)
A
HIGH EFFICIENCY RECTIFIERS
VOLTAGE RANGE: 200 V
CURRENT: 1.5 A
V
Easily cleaned with alcohol,Isopropanol
and similar solvents
IF(AV)
1.5
The plastic material carries U/L recognition 94V-0
RN1Z
140
200
A
3. Thermal resistance f rom junction to ambient.
IR
NOTE: 1. Measured with I
F=0.5A, IR=1A, Irr=0.25A.
- 55 ---- + 150
- 55 ---- + 150
0.92
50
20.0
Dimensions in millimeters
www.diode.kr
Diode Semiconductor Korea


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