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RG2Z Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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RG2Z Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page ![]() FEATURES Low cost Diffused junction MECHANICAL DATA Case: JEDEC DO-15, molded plastic Method 208 Mounting: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. Maximum peak repetitive reverse voltage VRRM 400 600 V Maximum RMS voltage VRMS 280 420 V Maximum DC blocking voltage VDC 400 600 V Maximum average f orw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimplsed on rated load @T J=125 Maximum instantaneous f orw ard voltage @ I F=IF(AV) VF 1.8 2.0 V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ 30 pF Typical thermal resistance (Note3) RθJL /W Operating junction temperature range TJ Storage temperature range TSTG 2. Measured at 1.0MH Z and applied rev erse v olt age of 4. 0V D C . A UNITS similar solvents IR 500 2500 1.1 60.0 1.5 1.0 70 200 IF(AV) 1.5 1.2 Easily cleaned with freon, alcohol, lsopropand and Terminals: Axial leads,solderable per MIL-STD-202, RG2Y NOTE: 1.Measured with I F=0. 5A, I R=1A, Irr=0. 25A. 3.Thermal resistance junction to ambient. High current capability Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams 49 IFSM - 55 ----- + 150 - 55 ----- + 150 RG2Y(Z)--- RG2A(Z) HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE: 70 --- 600 V CURRENT: 1.5 --- 1.0 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DO - 15 Low leakage Low forward voltage drop 70 12 50 A A RG2Z RG2 50 RG2A 140 200 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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