ISL85418

7

FN8369.5

March 13, 2015

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POWER-GOOD

Lower PG Threshold - VFB Rising

90

94

%

Lower PG Threshold - VFB Falling

82.5

86

%

Upper PG Threshold - VFB Rising

116.5

120

%

Upper PG Threshold - VFB Falling

107

112

%

PG Propagation Delay

Percentage of the soft-start time

10

%

PG Low Voltage

0.05

0.3

V

TRACKING AND SOFT-START

Soft-Start Charging Current

4.2

5.5

6.5

µA

Internal Soft-Start Ramp Time

1.5

2.4

3.4

ms

FAULT PROTECTION

Thermal Shutdown Temperature

Rising threshold

150

°C

Hysteresis

20

°C

Current Limit Blanking Time

17

Clock

pulses

Overcurrent and Auto Restart Period

8

SS cycle

Positive Peak Current Limit

IPLIMIT

(Note 8)

1

1.2

1.4

A

PFM Peak Current Limit

0.34

0.4

0.5

A

Zero Cross Threshold

15

mA

Negative Current Limit

INLIMIT

(Note 8)

-0.67

-0.6

-0.53

A

POWER MOSFET

High-side

250

350

mΩ

Low-side

90

130

mΩ

PHASE Leakage Current

EN = PHASE = 0V

300

nA

PHASE Rise Time

10

ns

EN/SYNC

Input Threshold

Falling edge, logic low

0.4

1V

Rising edge, logic high

1.2

1.4

V

EN Logic Input Leakage Current

EN = 0V/40V

-0.5

0.5

µA

SYNC Logic Input Leakage Current

SYNC = 0V

10

100

nA

SYNC = 5V

1.0

1.55

µA

NOTES:

7. FB forced above regulation point (0.6V), no switching, and power MOSFET gate charging current not included.

9. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization

and are not production tested.

10. Minimum On-Time required to maintain loop stability.

limits apply across the junction temperature range, -40°C to +125°C (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX