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K4S643232H Datasheet(PDF) 9 Page - Samsung semiconductor |
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K4S643232H Datasheet(HTML) 9 Page - Samsung semiconductor |
9 / 12 page CMOS SDRAM - 9 - SDRAM 64Mb H-die (x32) Rev. 1.4 August 2004 (Recommended operating condition unless otherwise noted, TA = 0 to 70 °C Parameter Symbol Test Condition CAS Latency Speed Unit Note 50 55 60 70 Operating Current (One Bank Active) ICC1 Burst Length =1 tRC ≥ tRC(min), tCC ≥ tCC(min), Io = 0mA 3 140 140 130 130 mA 2 2110 Precharge Standby Current in power-down mode ICC2PCKE ≤ VIL(max), tCC = 10ns 2 mA ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞ 2 Precharge Standby Current in non power-down mode ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 30ns 12 mA ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 7 Active Standby Current in power-down mode ICC3PCKE ≤ VIL(max), tCC = 10ns 4 mA ICC3PS CKE ≤ VIL(max), tCC = ∞ 4 Active Standby Current in non power-down mode (One Bank Active) ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 30ns 40 mA ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 35 Operating Current (Burst Mode) ICC4 Io = 0 mA, Page Burst All bank Activated, tCCD = tCCD(min) 3 170 160 150 140 mA 2 2120 Refresh Current ICC5 tRC ≥ tRC(min) 3 150 150 140 120 mA 3 2120 Self Refresh Current ICC6 CKE ≤ 0.2V C 2mA 4 L 450 uA 5 DC CHARACTERISTICS 1. Unless otherwise notes, Input level is CMOS(VIH/VIL=VDDQ/VSSQ) in LVTTL. 2. Measured with outputs open. 3. Refresh period is 64ms. 4. K4S643232H-TC 5. K4S643232H-TL Notes : |
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