K4S643232H datasheet(9/12 Pages) SAMSUNG

Part #	K4S643232H

Description	64Mb H-die (x32) SDRAM Specification

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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CMOS SDRAM

- 9 -

SDRAM 64Mb H-die (x32)

Rev. 1.4 August 2004

(Recommended operating condition unless otherwise noted, TA = 0 to 70

°C

Parameter

Symbol

Test Condition

CAS

Latency

Speed

Unit

Note

50

55

60

70

Operating Current

(One Bank Active)

ICC1

Burst Length =1

tRC

≥ tRC(min), tCC ≥ tCC(min), Io = 0mA

3

140

130

mA

2

2110

Precharge Standby Current in

power-down mode

ICC2PCKE

≤ VIL(max), tCC = 10ns

2

mA

ICC2PS

CKE

& CLK ≤ VIL(max), tCC = ∞

2

Precharge Standby Current

in non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 30ns

12

mA

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

7

Active Standby Current

in power-down mode

ICC3PCKE

≤ VIL(max), tCC = 10ns

4

mA

ICC3PS

CKE

≤ VIL(max), tCC = ∞

4

Active Standby Current

in non power-down mode

(One Bank Active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 30ns

40

mA

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

35

Operating Current

(Burst Mode)

ICC4

Io = 0 mA, Page Burst

All bank Activated, tCCD = tCCD(min)

3

170

160

150

140

mA

2

2120

Refresh Current

ICC5

tRC

≥ tRC(min)

3

150

140

120

mA

3

2120

Self Refresh Current

ICC6

CKE

≤ 0.2V

C

2mA

4

L

450

uA

5

DC CHARACTERISTICS

1. Unless otherwise notes, Input level is CMOS(VIH/VIL=VDDQ/VSSQ) in LVTTL.

2. Measured with outputs open.

3. Refresh period is 64ms.

4. K4S643232H-TC

5. K4S643232H-TL

Notes :

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