TPS622312DRYR datasheet(7/40 Pages) TI1

Part #	TPS622312DRYR

Description	2-MHz and 3-MHz Ultra Small Step-Down Converter in 1 x 1.5 USON Package

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Manufacturer	TI1 [Texas Instruments]

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TPS62230, TPS62231, TPS62232, TPS62233, TPS62234, TPS62235, TPS62236

TPS62237, TPS62238, TPS62239, TPS622310, TPS622311, TPS622312

TPS622313, TPS622314, TPS622315, TPS622316, TPS622317, TPS622318, TPS622319

www.ti.com

SLVS941G – APRIL 2009 – REVISED AUGUST 2016

Product Folder Links: TPS62230 TPS62231 TPS62232 TPS62233 TPS62234 TPS62235 TPS62236 TPS62237

TPS62238 TPS62239 TPS622310 TPS622311 TPS622312 TPS622313 TPS622314 TPS622315 TPS622316

TPS622317 TPS622318 TPS622319

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(1)

In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the

maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the

part/package in the application (RθJA), as given by the following equation: TA(max) = TJ(max) – (RθJA × PD(max)).

(2)

The minimum required supply voltage for startup is 2.05 V. The part is functional down to the falling under voltage lockout (UVL)

threshold.

(3)

VIN = VO + 1.0 V

(4)

The internal resistor divider network is disconnected from FB pin.

7.5 Electrical Characteristics

VIN = 3.6 V, VOUT = 1.8 V, EN = VIN, MODE = GND, TJ = –40°C to 125°C typical values are at TJ = 25°C (unless otherwise

noted), CIN = 2.2 μF, L = 2.2 μH, COUT = 4.7 μF.

(1)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY

VIN

Input voltage(2)

2.05

6

V

IQ

Operating quiescent current

PFM operation (MODE = GND), IOUT = 0 mA,

device not switching, TJ = –40°C to 85°C

22

40

μA

PFM operation (MODE = GND), IOUT = 0 mA,

device switching, VOUT = 1.2 V

25

μA

PWM operation (MODE = VIN), IOUT = 0 mA, device

switching

3

mA

ISD

Shutdown current

EN = GND, TJ = –40°C to 85°C

0.1

1

μA

VUVLO

Undervoltage lockout threshold

Falling

1.8

1.9

V

Rising

1.9

2.05

V

ENABLE, MODE THRESHOLD

VIH TH

Threshold for detecting high EN, MODE

2.05 V

≤ VIN ≤ 6 V , rising edge

0.8

1

V

VIL TH HYS

Threshold for detecting low EN, MODE

2.05 V

≤ VIN ≤ 6 V , falling edge, TJ = –40°C to

85°C

0.4

0.6

V

Rpd

Pull-down resistor EN, MODE

TPS622319

1

MΩ

IIN

Input bias current, EN, MODE

EN, MODE = GND or VIN, TJ = –40°C to 85°C,

except TPS622319

0.01

0.5

μA

POWER SWITCH

RDS(ON)

High side MOSFET ON-resistance

VIN = 3.6 V, TJ = –40°C to 85°C

600

850

m

Ω

Low Side MOSFET ON-resistance

350

480

ILIMF

Forward current limit MOSFET high-

side

VIN = 3.6 V, open-loop

690

850

1050

mA

Forward current limit MOSFET low-side

550

840

1220

mA

TJSD

Thermal shutdown

Increasing junction temperature

150

°C

Thermal shutdown hysteresis

Decreasing junction temperature

20

°C

CONTROLLER

tONmin

Minimum ON-time

MODE = VIN, IOUT = 0 mA

135

ns

tOFFmin

Minimum OFF-time

40

ns

OUTPUT

VREF

Internal reference voltage

0.7

V

VOUT

Output voltage accuracy(3)

MODE = GND, IOUT = 0 mA

0%

MODE = VIN, IOUT = 0 mA

TJ = 25°C

–2%

2%

TJ = –40°C to 125°C –2.5%

2.5%

DC output voltage load regulation

MODE = VIN

0.001

%/mA

DC output voltage line regulation

MODE = VIN, IOUT = 0 mA, 2.05 V ≤ VIN ≤ 6 V

0

%/V

tStart

Start-up time

Time from active EN to VOUT = 1.8 V, 10-Ω load

100

μs

ILK_SW

Leakage current into SW pin

VIN = VOUT = VSW = 3.6 V, EN = GND

(4) , T

J =

–40°C to 85°C

0.1

0.5

μA

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