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TPS62152 Datasheet(PDF) 6 Page - Texas Instruments |
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TPS62152 Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 43 page  6 TPS62150, TPS62150A, TPS62151, TPS62152, TPS62153 SLVSAL5D – NOVEMBER 2011 – REVISED SEPTEMBER 2016 www.ti.com Product Folder Links: TPS62150 TPS62150A TPS62151 TPS62152 TPS62153 Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated (1) The device is still functional down to Undervoltage Lockout (see parameter VUVLO). (2) Current into AVIN+PVIN pins. (3) This is the static current limit. It can be temporarily higher in applications due to internal propagation delay (see Current-Limit and Short- Circuit Protection section). (4) This is the accuracy provided at the FB pin for the adjustable VOUT version (line and load regulation effects are not included). For the fixed voltage versions the (internal) resistive divider is included. (5) Line and load regulation depend on external component selection and layout (see Figure 22 and Figure 23). 7.5 Electrical Characteristics over operating junction temperature (TJ = -40°C to 125°C), typical values at VIN=12 V and TA =25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN NOM MAX UNIT SUPPLY VIN Input Voltage Range(1) 3 17 V IQ Operating Quiescent Current EN = High, IOUT = 0 mA, device not switching 17 30 µA TA = -40°C to +85°C 17 25 ISD Shutdown Current(2) EN = Low 1.5 25 µA TA = -40°C to +85°C 1.5 4 VUVLO Undervoltage Lockout Threshold Falling Input Voltage (PWM mode operation) 2.6 2.7 2.8 V Hysteresis 200 mV TSD Thermal Shutdown Temperature 160 °C Thermal Shutdown Hysteresis 20 CONTROL (EN, DEF, FSW, SS/TR, PG) VH High Level Input Threshold Voltage (EN, DEF, FSW) 0.9 0.65 V VL Low Level Input Threshold Voltage (EN, DEF, FSW) 0.45 0.3 V ILKG Input Leakage Current (EN, DEF, FSW) EN = VIN or GND; DEF, FSW = VOUT or GND 0.01 1 µA VTH_PG Power Good Threshold Voltage Rising (%VOUT) 92% 95% 98% Falling (%VOUT) 87% 90% 94% VOL_PG Power Good Output Low Voltage IPG = –2 mA 0.07 0.3 V ILKG_PG Input Leakage Current (PG) VPG = 1.8 V 1 400 nA ISS/TR SS/TR Pin Source Current 2.3 2.5 2.7 µA POWER SWITCH rDS(on) High-Side MOSFET ON-Resistance VIN ≥ 6 V 90 170 mΩ VIN = 3 V 120 Low-Side MOSFET ON-Resistance VIN ≥ 6 V 40 70 mΩ VIN = 3 V 50 ILIMF High-Side MOSFET Forward Current Limit(3) VIN = 12 V, TA = 25°C 1.4 1.7 2.2 A OUTPUT ILKG_FB Input Leakage Current (FB) TPS62150, VFB = 0.8 V 1 100 nA VOUT Output Voltage Range (TPS62150) VIN ≥ VOUT 0.9 6.0 V DEF (Output Voltage Programming) DEF = 0 (GND) VOUT DEF = 1 (VOUT) VOUT + 5% Initial Output Voltage Accuracy(4) PWM mode operation, VIN ≥ VOUT + 1 V 785.6 800 814.4 mV PWM mode operation, VIN ≥ VOUT + 1 V, TA = –10°C to 85°C 788.0 800 812.8 Power Save Mode operation, COUT = 22 µF 781.6 800 822.4 Load Regulation(5) VIN = 12 V, VOUT = 3.3 V, PWM mode operation 0.05 %/A Line Regulation(5) 3 V ≤ VIN ≤ 17 V, VOUT = 3.3 V, IOUT = 1 A, PWM mode operation 0.02 %/V |
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