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TPS3110K16DVB Datasheet(PDF) 11 Page - Texas Instruments |
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TPS3110K16DVB Datasheet(HTML) 11 Page - Texas Instruments |
11 / 22 page TPS31xxExx, TPS31xxH20, TPS31xxK33 ULTRALOW SUPPLY CURRENT/SUPPLY VOLTAGE SUPERVISORY CIRCUITS SLVS363B − AUGUST 2001 − REVISED SEPTEMBER 2004 www.ti.com 11 electrical characteristics over recommended operating conditions (unless otherwise noted) PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT VDD = 3.3 V, IOH = −3 mA VDD = 1.8 V, IOH = −2 mA 0.8 VDD VOH High-level output voltage VDD = 1.5 V, IOH = −1 mA 0.8 × VDD V VOH High-level output voltage VDD = 0.9 V, IOH = −0.4 mA V VDD = 0.5 V, IOH = −5 µA 0.7 × VDD VDD = 3.3 V, IOL = 3 mA Low-level output VDD = 1.5 V, IOL = 2 mA 0.3 VOL Low-level output voltage VDD = 1.2 V, IOL = 1 mA 0.3 V VOL voltage VDD = 0.9 V, IOL = 500 µA V RESET only VDD = 0.4 V, IOL = 5 µA 0.1 TPS31xxE09 0.854 0.86 0.866 TPS31xxE12 1.133 1.142 1.151 VIT− Negative-going input (1) TPS31xxE15 TA = 25°C 1.423 1.434 1.445 V VIT− Negative-going input threshold voltage (1) TPS31xxE16 TA = 25°C 1.512 1.523 1.534 V threshold voltage TPS31xxH20 1.829 1.843 1.857 TPS31xxK33 2.919 2.941 2.963 VIT−(S) Negative-going input threshold voltage (1) SENSE, PFI VDD ≥ 0.8 V, TA = 25°C 0.542 0.551 0.559 V 0.8 V ≤ VIT < 1.5 V 20 Vhys Hysteresis at VDD input 1.6 V ≤ VIT < 2.4 V 30 mV Vhys Hysteresis at VDD input 2.5 V ≤ VIT < 3.3 V 50 mV T(K) Temperature coefficient of VIT−, PFI, SENSE TA = −40°C to 85°C −0.012 −0.019 %/K Vhys Hysteresis at SENSE, PFI input VDD ≥ 0.8 V 15 mV MR MR = VDD, VDD = 3.3 V −25 25 IIH High-level input current SENSE, PFI, WDI SENSE, PFI, WDI = VDD, VDD = 3.3 V −25 25 nA IIL Low-level input current MR MR = 0 V, VDD = 3.3 V −47 −33 −25 µA IIL Low-level input current SENSE, PFI, WDI SENSE, PFI, WDI = 0 V, VDD = 3.3 V −25 25 nA IOH High-level output current at RESET (2) Open drain VDD = VIT + 0.2 V, VOH = 3.3 V 200 nA VDD > VIT (average current), VDD < 1.8 V 1.2 3 IDD Supply current VDD > VIT (average current), VDD > 1.8 V 2 4.5 µA DD VDD < VIT, VDD < 1.8 V 22 VDD < VIT, VDD > 1.8 V 27 Internal pull-up resistor at MR 70 100 130 k Ω Ci Input capacitance at MR, SENSE, PFI, WDI VI = 0 V to VDD 1 pF (1) To ensure the best stability of the threshold voltage, a bypass capacitor (ceramic, 0.1 µF) should be placed close to the supply terminals. (2) Also refers to RSTVDD and RSTSENSE |
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