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DS1270AB-100IND Datasheet(PDF) 6 Page - Dallas Semiconductor |
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DS1270AB-100IND Datasheet(HTML) 6 Page - Dallas Semiconductor |
6 / 8 page DS1270Y/AB 6 of 8 POWER-DOWN/POWER-UP CONDITION SEE NOTE 11 POWER-DOWN/POWER-UP TIMING (tA: See Note 10) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES VCC Fail Detect to CE and WE Inactive tPD 1.5 µs 11 VCC slew from VTP to 0V tF 150 µs VCC slew from 0V to VTP tR 150 µs VCC Valid to CE and WE Inactive tPU 2 ms VCC Valid to End of Write Protection tREC 125 ms (tA=25 °C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Expected Data Retention Time tDR 5 years 9 WARNING: Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery backup mode. NOTES: 1. WE is high for a read cycle. 2. OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high-impedance state. 3. tWP is specified as the logical AND of CE and WE . tWP is measured from the latter of CE or WE going low to the earlier of CE or WE going high. 4. tDS is measured from the earlier of CE or WE going high. 5. These parameters are sampled with a 5 pF load and are not 100% tested. 6. If the CE low transition occurs simultaneously with or latter than the WE low transition, the output buffers remain in a high-impedance state during this period. 7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain in high-impedance state during this period. |
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