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TPS54910 Datasheet(PDF) 4 Page - Texas Instruments |
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TPS54910 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 22 page TPS54910 SLVS421C − MARCH 2002 − REVISED FEBRUARY 2005 www.ti.com 4 ELECTRICAL CHARACTERISTICS (continued) TJ = –40°C to 125°C, VI = 3 V to 4 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ERROR AMPLIFIER Error amplifier open loop voltage gain 1 kΩ COMP to AGND(1) 90 110 dB Error amplifier unity gain bandwidth Parallel 10 kΩ, 160 pF COMP to AGND(1) 3 5 MHz Error amplifier common mode input voltage range Powered by internal LDO(1) 0 VBIAS V Input bias current, VSENSE VSENSE = Vref 60 250 nA Output voltage slew rate (symmetric), COMP 1.0 1.4 V/µs PWM COMPARATOR PWM comparator propagation delay time, PWM comparator input to PH pin (excluding deadtime) 10-mV overdrive(1) 70 85 ns SLOW-START/ENABLE Enable threshold voltage, SS/ENA 0.82 1.2 1.4 V Enable hysteresis voltage, SS/ENA(1) 0.03 V Falling edge deglitch, SS/ENA(1) 2.5 µs Internal slow-start time 2.6 3.35 4.1 ms Charge current, SS/ENA SS/ENA = 0 V 3 5 8 µA Discharge current, SS/ENA SS/ENA = 1.3 V, VI = 1.5 V 1.5 2.3 4.0 mA POWER GOOD Power good threshold voltage VSENSE falling 90 %Vref Power good hysteresis voltage(1) 3 %Vref Power good falling edge deglitch(1) 35 µs Output saturation voltage, PWRGD I(sink) = 2.5 mA 0.18 0.3 V Leakage current, PWRGD VI = 5.5 V 1 µA CURRENT LIMIT Current limit VI = 3.3 V(1), Output shorted 11 15 A Current limit leading edge blanking time 100 ns Current limit total response time 200 ns THERMAL SHUTDOWN Thermal shutdown trip point(1) 135 150 165 °C Thermal shutdown hysteresis(1) 10 °C OUTPUT POWER MOSFETS P MOSFET it h VI = 3 V(4) 15 30 Ω rDS(on) Power MOSFET switches VI = 3.6 V(4) 14 28 mΩ (1) Specified by design (2) Static resistive loads only (3) Specified by the circuit used in Figure 10 (4) Matched MOSFETs low-side rDS(on) production tested, high-side rDS(on) production tested. |
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Similar Description - TPS54910_16 |
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