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TPS54910 Datasheet(PDF) 4 Page - Texas Instruments

Part # TPS54910
Description  3-V TO 4-V INPUT, 9-A OUTPUT SYNCHRONOUS BUCK PWM SWITCHER WITH INTEGRATED FETs
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS54910 Datasheet(HTML) 4 Page - Texas Instruments

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TPS54910
SLVS421C − MARCH 2002 − REVISED FEBRUARY 2005
www.ti.com
4
ELECTRICAL CHARACTERISTICS (continued)
TJ = –40°C to 125°C, VI = 3 V to 4 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ERROR AMPLIFIER
Error amplifier open loop voltage gain
1 kΩ COMP to AGND(1)
90
110
dB
Error amplifier unity gain bandwidth
Parallel 10 kΩ, 160 pF COMP to AGND(1)
3
5
MHz
Error amplifier common mode input voltage
range
Powered by internal LDO(1)
0
VBIAS
V
Input bias current, VSENSE
VSENSE = Vref
60
250
nA
Output voltage slew rate (symmetric), COMP
1.0
1.4
V/µs
PWM COMPARATOR
PWM comparator propagation delay time,
PWM comparator input to PH pin
(excluding deadtime)
10-mV overdrive(1)
70
85
ns
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA
0.82
1.2
1.4
V
Enable hysteresis voltage, SS/ENA(1)
0.03
V
Falling edge deglitch, SS/ENA(1)
2.5
µs
Internal slow-start time
2.6
3.35
4.1
ms
Charge current, SS/ENA
SS/ENA = 0 V
3
5
8
µA
Discharge current, SS/ENA
SS/ENA = 1.3 V, VI = 1.5 V
1.5
2.3
4.0
mA
POWER GOOD
Power good threshold voltage
VSENSE falling
90
%Vref
Power good hysteresis voltage(1)
3
%Vref
Power good falling edge deglitch(1)
35
µs
Output saturation voltage, PWRGD
I(sink) = 2.5 mA
0.18
0.3
V
Leakage current, PWRGD
VI = 5.5 V
1
µA
CURRENT LIMIT
Current limit
VI = 3.3 V(1), Output shorted
11
15
A
Current limit leading edge blanking time
100
ns
Current limit total response time
200
ns
THERMAL SHUTDOWN
Thermal shutdown trip point(1)
135
150
165
°C
Thermal shutdown hysteresis(1)
10
°C
OUTPUT POWER MOSFETS
P
MOSFET
it h
VI = 3 V(4)
15
30
Ω
rDS(on)
Power MOSFET switches
VI = 3.6 V(4)
14
28
mΩ
(1) Specified by design
(2) Static resistive loads only
(3) Specified by the circuit used in Figure 10
(4) Matched MOSFETs low-side rDS(on) production tested, high-side rDS(on) production tested.


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