TPS54350 datasheet(4/34 Pages) TI1

Part #	TPS54350

Description	4.5-V TO 20-V INPUT, 3-A OUTPUT SYNCHRONOUS PWM SWITCHER WITH INTEGRATER FET

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Manufacturer	TI1 [Texas Instruments]

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TPS54350

SLVS456C − OCTOBER 2003 − REVISED OCTOBER 2004

www.ti.com

4

ELECTRICAL CHARACTERISTICS

TJ = –40°C to 125°C, VIN = 4.5 V to 20 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

FEED− FORWARD MODULATOR (INTERNAL SIGNAL)

Modulator gain

VIN = 12 V, TJ = 25°C

8

V/V

Modulator gain variation

−25%

25%

Minimum controllable ON time (1)

180

ns

Maximum duty factor (1)

VIN = 4.5 V

80%

86%

ERROR AMPLIFIER (VSENSE AND COMP PINS)

Error amplifier open loop voltage gain (1)

60

80

dB

Error amplifier unity gain bandwidth (1)

1.0

2.8

MHz

Input bias current, VSENSE pin

500

nA

COMP

Output voltage slew rate (symmetric) (1)

1.5

V/

µs

ENABLE (ENA PIN)

Disable low level input voltage

0.5

V

Internal slow-start time (10% to 90%)

fs = 250 kHz, RT = ground (1)

4.6

ms

Internal slow-start time (10% to 90%)

fs = 500 kHz, RT = Hi−Z (1)

2.3

ms

Pullup current source

1.8

5

10

µA

Pulldown MOSFET

II(ENA)=1 mA

0.1

V

POWER GOOD (PWRGD PIN)

Power good threshold

Rising voltage

97%

Rising edge delay (1)

fs = 250 kHz

4

ms

Rising edge delay (1)

fs = 500 kHz

2

ms

Output saturation voltage

Isink = 1 mA, VIN > 4.5 V

0.05

V

PWRGD

Output saturation voltage

Isink = 100 µA, VIN = 0 V

0.76

V

PWRGD

Open drain leakage current

Voltage on PWRGD = 6 V

3

µA

CURRENT LIMIT

Current limit

VIN = 12 V

3.3

4.5

6.5

A

Current limit Hiccup Time (1)

fs = 500 kHz

4.5

ms

THERMAL SHUTDOWN

Thermal shutdown trip point (1)

165

_C

Thermal shutdown hysteresis (1)

7

_C

LOW SIDE MOSFET DRIVER (LSG PIN)

Turn on rise time, (10%/90%) (1)

VIN = 4.5 V, Capacitive load = 1000 pF

15

ns

Deadtime (1)

VIN = 12 V

60

ns

Driver ON resistance

VIN = 4.5 V sink/source

7.5

Ω

Driver ON resistance

VIN = 12 V sink/source

5

Ω

OUTPUT POWER MOSFETS (PH PIN)

Phase node voltage when disabled

DC conditions and no load, ENA = 0 V

0.5

V

Voltage drop, low side FET and diode

VIN = 4.5 V, Idc = 100 mA

1.13

1.42

V

Voltage drop, low side FET and diode

VIN = 12 V, Idc = 100 mA

1.08

1.38

V

rDS(ON), high side power MOSFET switch(2)

VIN = 4.5 V, BOOT−PH = 4.5 V, IO = 0.5 A

150

300

m

Ω

rDS(ON), high side power MOSFET switch(2)

VIN = 12 V, BOOT−PH = 8 V, IO = 0.5 A

100

200

m

Ω

(1) Ensured by design, not production tested.

(2) Resistance from VIN to PH pins.

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