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SG10A Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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SG10A Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon Alcohol,Isopropanol and similar solvents MECHANICAL DATA Case: JEDEC DO-15,molded plastic Terminals : Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting pos ition: Any Ratings at 25 ambient temperature unless otherwise s pecified. Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%. SG 10D SG 10G SG 10J SG 10K SG 10M UNITS Maximum recurrent peak reverse voltage VRRM 200 400 600 800 1000 V Maximum RMS voltage VRMS 140 280 420 560 700 V Maximum DC blocking voltage VDC 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 10ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 1.0A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) trr 250 ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG NOTE: 1. Measured with I F=0. 5A, IR=1A, Irr=0. 25A. SG10A---SG10M MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS A IF(AV) 100 35 50 1.0 3. Thermal resistance f rom junction to ambient. FAST RECOVERY RECTIFIERS VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A 30.0 1.3 100.0 5.0 150 IFSM 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 70 100 A IR A 12 55 - 55 ---- +150 - 55 ---- +150 SG 10A 50 SG 10B 500 DO - 15 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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