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TPS54311 Datasheet(PDF) 11 Page - Texas Instruments

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Part # TPS54311
Description  3-V to 6-V Input, 3-A Output Synchronous-Buck PWM Switcher With Integrated FETs
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

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SWITCHING FREQUENCY
100 k
R
500 kHz
=
×
TPS54310
www.ti.com
SLVS412E – DECEMBER 2001 – REVISED DECEMBER 2014
Feature Description (continued)
(3)
External synchronization of the PWM ramp is possible over the frequency range of 330 kHz to 700 kHz by driving
a synchronization signal into SYNC and connecting a resistor from RT to AGND. Choose an RT resistor that sets
the free-running frequency to 80% of the synchronization signal. Table 1 summarizes the frequency selection
configurations.
Table 1. Summary of the Frequency Selection Configurations
SWITCHING FREQUENCY
SYNC PIN
RT PIN
350 kHz, internally set
Float or AGND
Float
550 kHz, internally set
≥ 2.5 V
Float
Externally set 280 kHz to 700 kHz
Float
R = 68 k to 180 k
Externally synchronized frequency
Synchronization signal
R = RT value for 80% of external synchronization frequency
8.3.6 Error Amplifier
The high performance, wide bandwidth, voltage error amplifier sets the TPS54310 apart from most dc/dc
converters. The user is given the flexibility to use a wide range of output L and C filter components to suit the
particular needs of the application. Type 2 or type 3 compensation can be employed using external
compensation components.
8.3.7 PWM Control
Signals from the error amplifier output, oscillator, and current limit circuit are processed by the PWM control logic.
Referring to the internal block diagram, the control logic includes the PWM comparator, OR gate, PWM latch,
and portions of the adaptive dead-time and control logic block. During steady-state operation below the current
limit threshold, the PWM comparator output and oscillator pulse train alternately reset and set the PWM latch.
Once the PWM latch is set, the low-side FET remains on for a minimum duration set by the oscillator pulse
duration. During this period, the PWM ramp discharges rapidly to its valley voltage. When the ramp begins to
charge back up, the low-side FET turns off and high-side FET turns on. As the PWM ramp voltage exceeds the
error amplifier output voltage, the PWM comparator resets the latch, thus turning off the high-side FET and
turning on the low-side FET. The low-side FET remains on until the next oscillator pulse discharges the PWM
ramp.
During transient conditions, the error amplifier output could be below the PWM ramp valley voltage or above the
PWM peak voltage. If the error amplifier is high, the PWM latch is never reset and the high-side FET remains on
until the oscillator pulse signals the control logic to turn the high-side FET off and the low-side FET on. The
device operates at its maximum duty cycle until the output voltage rises to the regulation set-point, setting
VSENSE to approximately the same voltage as Vref. If the error amplifier output is low, the PWM latch is
continually reset and the high-side FET does not turn on. The low-side FET remains on until the VSENSE
voltage decreases to a range that allows the PWM comparator to change states. The TPS54310 is capable of
sinking current continuously until the output reaches the regulation set-point.
If the current limit comparator trips for longer than 100 ns, the PWM latch resets before the PWM ramp exceeds
the error amplifier output. The high-side FET turns off and low-side FET turns on to decrease the energy in the
output inductor and consequently the output current. This process is repeated each cycle in which the current
limit comparator is tripped.
8.3.8 Dead-Time Control and MOSFET Drivers
Adaptive dead-time control prevents shoot-through current from flowing in both N-channel power MOSFETs
during the switching transitions by actively controlling the turn-on times of the MOSFET drivers. The high-side
driver does not turn on until the gate drive voltage to the low-side FET is below 2 V. The low-side driver does not
turn on until the voltage at the gate of the high-side MOSFETs is below 2 V. The high-side and low-side drivers
are designed with 300-mA source and sink capability to quickly drive the power MOSFETs gates. The low-side
driver is supplied from VIN, while the high-side drive is supplied from the BOOT pin. A bootstrap circuit uses an
external BOOT capacitor and an internal 2.5-
Ω bootstrap switch connected between the VIN and BOOT pins.
The integrated bootstrap switch improves drive efficiency and reduces external component count.
Copyright © 2001–2014, Texas Instruments Incorporated
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