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TPS54260QDGQRQ1 Datasheet(PDF) 5 Page - Texas Instruments |
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TPS54260QDGQRQ1 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 52 page TPS54260-Q1 www.ti.com SLVSAH8F – DECEMBER 2010 – REVISED AUGUST 2015 6.4 Thermal Information TPS54260-Q1 THERMAL METRIC(1)(2) DRC (VSON) DGQ (HVSSOP) UNIT 10 PINS 10 PINS Standard board 40 62.5 RθJA Junction-to-ambient thermal resistance °C/W Custom board(3) — 57 RθJC(top) Junction-to-case (top) thermal resistance 65 83 °C/W RθJB Junction-to-board thermal resistance 8 28 °C/W ψJT Junction-to-top characterization parameter 0.6 1.7 °C/W ψJB Junction-to-board characterization parameter 7.5 20.1 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 7.8 21 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. (2) Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where distortion starts to substantially increase. See power dissipation estimate in application section of this data sheet for more information. (3) Test boards conditions: (a) 3 inches × 3 inches, 2 layers, thickness: 0.062 inch (b) 2-oz copper traces located on the top of the PCB (c) 2-oz copper ground plane, bottom layer (d) 6 thermal vias (13 mil) located under the device package 6.5 Electrical Characteristics TJ = –40 to 150°C, VIN = 3.5 to 60 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VOLTAGE (VIN PIN) Operating input voltage 3.5 60 V Internal undervoltage lockout No voltage hysteresis, rising and falling 2.5 V threshold Shutdown supply current EN = 0 V, 25°C, 3.5 V ≤ VIN ≤ 60 V 1.3 4 μA Operating: nonswitching supply VSENSE = 0.83 V, VIN = 12 V, 25°C 138 200 current ENABLE AND UVLO (EN PIN) Enable threshold voltage No voltage hysteresis, rising and falling, 25°C 1.15 1.25 1.36 V Enable threshold +50 mV –3.8 Input current μA Enable threshold –50 mV –0.9 Hysteresis current –2.9 μA VOLTAGE REFERENCE TJ = 25°C 0.792 0.8 0.808 Voltage reference V 0.784 0.8 0.816 HIGH-SIDE MOSFET VIN = 3.5 V, BOOT-PH = 3 V 300 On-resistance m Ω VIN = 12 V, BOOT-PH = 6 V 200 410 ERROR AMPLIFIER Input current 50 nA Error amplifier transconductance (gM) –2 μA < ICOMP < 2 μA, VCOMP = 1 V 310 μS –2 μA < ICOMP < 2 μA, VCOMP = 1 V, Error amplifier transconductance (gM) 70 μS during slow start VVSENSE = 0.4 V Error amplifier dc gain VVSENSE = 0.8 V 10,000 V/V Error amplifier bandwidth 2700 kHz Error amplifier source/sink V(COMP) = 1 V, 100 mV overdrive ±27 μA COMP to switch current 10.5 A/V transconductance Copyright © 2010–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: TPS54260-Q1 |
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