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EF204L Datasheet(PDF) 1 Page - Diode Semiconductor Korea

Part # EF204L
Description  SUPER FAST RECTIFIERS
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Manufacturer  DSK [Diode Semiconductor Korea]
Direct Link  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

EF204L Datasheet(HTML) 1 Page - Diode Semiconductor Korea

  EF204L Datasheet HTML 1Page - Diode Semiconductor Korea EF204L Datasheet HTML 2Page - Diode Semiconductor Korea  
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FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
MECHANICAL DATA
Case:JEDEC DO--15
L,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.017 ounces,0.48 grams
Mounting position: Any
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.
EF202L
EF204L
EF204L
EF208L
UNITS
Maximumrecurrent peak reverse voltage
VRRM
V
MaximumRMS voltage
VRMS
V
MaximumDCblocking voltage
VDC
V
Maximumaverage forw ard rectified current
9.5mmlead length,
@T
A=75
Peak forw ard surge current
8.3ms single half-sine-wave
superimposed on rated load
@T
J=125
Maximum instantaneous forward voltage
@ 2.0A
VF
V
Maximum reverse current
@T
A=25
at rated DCblocking voltage @T
A=100
Maximumreverse recovery time (Note 1)
trr
ns
Typical junction capacitance
(Note 2)
CJ
pF
Typical thermal resistance
(Note 3)
RθJA
/W
Operating junction temperature range
TJ
Storage temperature range
TSTG
200
400
600
800
The plastic material carries U/Lrecognition 94V-0
VOLTAGE RANGE: 200 --- 800 V
CURRENT: 2.0 A
DO - 15L
EF202L --- EF208L
SUPER FAST RECTIFIERS
40
35
50
62
1.0
1.3
1.5
1.7
200
A
5.0
Easily cleaned with alcohol,Isopropanol
and similar solvents
IF(AV)
2.0
200
400
600
800
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
70
280
420
560
3.Thermal resistance junction to ambient.
A
50
IR
IFSM
NOTE: 1. Measured with I
F=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
A
- 55 ----- + 150
- 55 ----- + 150
Dimensions in millimeters
www.diode.kr
Diode Semiconductor Korea


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