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OPA684IDBVTG4 Datasheet(PDF) 3 Page - Texas Instruments |
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OPA684IDBVTG4 Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 31 page  OPA684 3 SBOS219D www.ti.com OPA684ID, IDBV 0 °C to –40 °C to MIN/ TEST PARAMETER CONDITIONS +25 °C +25 °C(1) 70 °C(2) +85 °C(2) UNITS MAX LEVEL(3) TYP MIN/MAX OVER TEMPERATURE ELECTRICAL CHARACTERISTICS: VS = ±5V RF = 1kΩ, RL = 100Ω, and G = +2, (See Figure 1 for AC performance only), unless otherwise noted. AC PERFORMANCE (See Figure 1) Small-Signal Bandwidth (VO = 0.5VPP) G = +1, RF = 1kΩ 210 MHz typ C G = +2, RF = 1kΩ 160 112 110 104 MHz min B G = +5, RF = 1kΩ 134 MHz typ C G = +10, RF = 1kΩ 120 MHz typ C G = +20, RF = 1kΩ 104 MHz typ C Bandwidth for 0.1dB Gain Flatness G = +2, VO = 0.5VPP, RF = 1kΩ 19 16 14 14 MHz min B Peaking at a Gain of +1 RF = 1kΩ, VO = 0.5VPP 1.4 4.8 5.9 6.3 dB max B Large-Signal Bandwidth G = +2, VO = 4VPP 90 MHz typ C Slew Rate G = –1, VO = 4V Step 820 675 650 575 V/ µsmin B G = +2,VO = 4V Step 750 650 620 590 V/ µsmin B Rise-and-Fall Time G = +2, VO = 0.5V Step 3 ns typ C G = +2, VO = 4VStep 6.8 ns typ C Harmonic Distortion G = +2, f = 5MHz, VO = 2VPP 2nd-Harmonic RL = 100Ω –67 –59 –59 –58 dBc max B RL ≥ 1kΩ –78 –64 –64 –63 dBc max B 3rd-Harmonic RL = 100Ω –70 –66 –65 –65 dBc max B RL ≥ 1kΩ –89 –82 –81 –81 dBc max B Input Voltage Noise f > 1MHz 3.7 4.1 4.2 4.4 nV/ √Hz max B Non-inverting Input Current Noise f > 1MHz 9.4 11 12 12.5 pA/ √Hz max B Inverting Input Current Noise f > 1MHz 17 18 18.5 19 pA/ √Hz max B Differential Gain G = +2, NTSC, VO = 1.4Vp, RL = 150Ω 0.04 % typ C Differential Phase G = +2, NTSC, VO = 1.4Vp, RL = 150Ω 0.02 deg typ C DC PERFORMANCE(4) Open-Loop Transimpedance Gain (ZOL) VO = 0V, RL = 1kΩ 355 160 155 153 k Ω min A Input Offset Voltage VCM = 0V ±1.5 ±3.5 ±4.1 ±4.3 mV max A Average Offset Voltage Drift VCM = 0V ±12 ±12 µV/°Cmax B Non-inverting Input Bias Current VCM = 0V ±5.0 ±10 ±11.5 ±12 µAmax A Average Non-inverting Input Bias Current Drift VCM = 0V ±25 ±30 nA/ °Cmax B Inverting Input Bias Current VCM = 0V ±5.0 ±16 ±17.5 ±18.5 µAmax A Average Inverting Input Bias Current Drift VCM = 0V ±35 ±40 nA °/C max B INPUT Common-Mode Input Range(5) (CMIR) ±3.75 ±3.65 ±3.65 ±3.6 V min A Common-Mode Rejection Ratio (CMRR) VCM = 0V 60 53 52 52 dB min A Non-inverting Input Impedance 50 || 2 k Ω || pF typ C Inverting Input Resistance (RI) Open-Loop, DC 2.5 Ω typ C OUTPUT Voltage Output Swing 1k Ω Load ±4.1 ±4.0 ±4.0 ±3.9 V min A Current Output, Sourcing VO = 0 160 140 135 130 mA min A Current Output, Sinking VO = 0 –120 –110 –105 –100 mA min A Closed-Loop Output Impedance G = +2, f = 100kHz 0.006 Ω typ C DISABLE (Disabled Low) Power-Down Supply Current (+VS)VDIS = 0 –100 –150 –170 –180 µAmax A Disable Time VIN = +1V, G = +2 4 ms typ C Enable Time VIN = +1V, G = +2 40 ns typ C Off Isolation G = +2, 5MHz 70 dB typ C Output Capacitance in Disable 1.7 pF typ C Enable Voltage 3.4 3.5 3.6 3.7 V min A Disable Voltage 1.8 1.7 1.6 1.5 V max A Control Pin Input Bias Current (DIS) VDIS = 0V 80 120 130 135 µAmax A POWER SUPPLY Specified Operating Voltage ±5 V typ C Maximum Operating Voltage Range ±6 ±6 ±6V max A Minimum Operating Voltage Range ±1.4 V min C Max Quiescent Current VS = ±5V 1.7 1.8 1.85 1.85 mA max A Min Quiescent Current VS = ±5V 1.7 1.6 1.55 1.45 mA min A Power-Supply Rejection Ratio (–PSRR) Input Referred 60 54 53 53 dB typ A TEMPERATURE RANGE Specification: ID, IDBV –40 to +85 °C typ C Thermal Resistance, θ JA Junction-to-Ambient DSO-8 125 °C/W typ C DBV SOT-23-6 150 °C/W typ C NOTES: (1) Junction temperature = ambient for 25 °C tested specifications. (2) Junction temperature = ambient at low temperature limit, junction temperature = ambient +2 °C at high temperature limit for over temperature tested specifications. (3) Test levels: (A) 100% tested at 25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out-of-node. VCM is the input common-mode voltage. (5) Tested < 3dB below minimum specified CMR at ±CMIR limits. |
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