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TPS24772 Datasheet(PDF) 5 Page - Texas Instruments

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Part # TPS24772
Description  2.5 to 18-V High Performance Hot Swap
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS24772 Datasheet(HTML) 5 Page - Texas Instruments

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TPS24772
TPS24771
TPS24770
www.ti.com
SLVSCZ3 – MARCH 2015
8.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VDD, SENM, SET, FSTP
2.5
18
Input voltage
V
ENHS, FLTb, PGHS, OUTH
0
18
Sink current
FLTb, PGHS
0
2
mA
Source current
IMON
0
1
mA
PLIM
4.99
500
k
Ω
IMON
1
6
k
Ω
External resistance
FSTP
10
4000
Ω
SET
10
400
Ω
w/o RSTBL
10
70
RIMON / RSET
With appropriate RSTBL
(1)
3
10
with CHGATE > 47nF
(2)
10
200
TINR, TFLT
1
nF
HGATE, (2)
0
1
µF
External capacitor
IMON
30
pF
IMONBUF
100
pF
Operating junction temperature, TJ
–40
125
°C
(1)
Refer to RSTBL Requirment for RIMON / RSET < 10 as described in section Select RSNS and VSNS,CL Setting.
(2)
External capacitance tied to HGATE, should be in series with a resistor no less than 1k
Ω.
8.4 Thermal Information
RGE
THERMAL METRIC(1)
UNIT
24 PINS
RθJA
Junction-to-ambient thermal resistance
34.6
RθJC(top)
Junction-to-case (top) thermal resistance
38.4
RθJB
Junction-to-board thermal resistance
12.9
°C/W
ψJT
Junction-to-top characterization parameter
0.5
ψJB
Junction-to-board characterization parameter
12.9
RθJC(bot)
Junction-to-case (bottom) thermal resistance
3.2
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
8.5 Electrical Characteristics
Unless otherwise noted these limits apply to the following: -40°C < TJ<125°C; 2.5V < VVDD, VOUT < 18V; VENHS = 2 V; VOV = 0
V; VHGATE, VPGHS, VFLTB, and VIMONBUF are floating; CINR = 1nF; CFLT = 1nF; RSET = 44.2 Ω; RIMON = 2.98k Ω; RFSTP = 200 Ω;
RPLIM = 52 kΩ.
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
INPUT SUPPLY (VDD)
VUVR
UVLO threshold, rising
2.2
2.32
2.45
V
VUVhyst
UVLO hysteresis
0.10
V
IQON
Supply current: IVDD + IOUTH
Device on, VENHS = 2V
2.95
4
mA
Hot Swap FET ENABLE (ENHS)
VENHS
Threshold voltage, rising
1.3
1.35
1.4
V
VENHShyst
Hysteresis
50
mV
IENHS
Input Leakage Current
0
≤ VENHS ≤ 30V
–1
1
µA
OVER VOLTAGE (OV)
VOVR
Threshold voltage, rising
1.3
1.35
1.4
mV
VOVhyst
Hysteresis
50
mV
IOV
Input leakage current
0
≤ VOV ≤ 30V
–1
1
µA
Copyright © 2015, Texas Instruments Incorporated
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Product Folder Links: TPS24772 TPS24771 TPS24770


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