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ZRA125F02TA Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZRA125F02TA Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 5 page NOTES: (1) T V change x V X temperature change C R R = 1000 000 ,, TC is a characterized parameter not measured on individual devices. (2) R V change I to to I II S RR R RR = − ( (min) (min) (max)) (max) (min) ZRA125 SEMICO NDUC TORS ISSUE 3 - MARCH 2004 2 Reverse current 25mA Forward current 25mA Operating temperature -40 to 85°C Storage temperature -55 to 150°C POWER DISSAPATION (Tamb = 25°C) SOT23 330mW ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. TOL % UNITS VR Reverse breakdown voltage IR = 150 A 1.225 1.21 1.25 1.25 1.275 1.29 2 3 V V IMIN Minimum operating current 30 50 A IR Recommended operating current 0.05 5 mA TC (1) Average reverse breakdown voltage temp. co. IR(min) to IR(max) 30 90 ppm/°C RS (2) Slope resistance 0.65 2 ZR Reverse dynamic impedance IR = 1mA f = 100Hz IAC =0.1IR 0.5 1 EN Wideband Noise Voltage IR = 150 A f = 100Hz to 10kHZ 40 V(rms) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) |
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