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INA128UG4 Datasheet(PDF) 3 Page - Texas Instruments |
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INA128UG4 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 29 page R V G − IN V+ IN V R − G V+ V O Ref 1 2 3 4 8 7 6 5 INA128, INA129 www.ti.com SBOS051C – OCTOBER 1995 – REVISED OCTOBER 2015 5 Pin Configuration and Functions D and P Packages 8 Pin SOIC and PDIP Top View Pin Functions PIN I/O DESCRIPTION NAME NO. REF 5 I Reference input. This pin must be driven by low impedance or connected to ground. RG 1,8 — Gain setting pin. For gains greater than 1, place a gain resistor between pin 1 and pin 8. V- 4 — Negative supply V+ 7 — Positive supply VIN- 2 I Negative input VIN+ 3 I Positive input VO 6 I Output 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage ±18 V Analog input voltage ±40 V Output short circuit (to ground) continuous Operating temperature –40 125 °C Junction temperature 150 °C Lead temperature (soldering, 10s) 300 °C Tstg Storage temperature –55 125 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V(ESD) Electrostatic discharge V Charged-device model (CDM), per JEDEC specification JESD22- ±50 C101(2) (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Copyright © 1995–2015, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: INA128 INA129 |
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