4

INA270A-Q1, INA271A-Q1

SBOS401C – JULY 2007 – REVISED APRIL 2016

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Product Folder Links: INA270A-Q1 INA271A-Q1

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Copyright © 2007–2016, Texas Instruments Incorporated

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

2000

V

Machine Model (MM)

100

Charged-device model (CDM), per AEC Q100-011

1000

7.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

Supply voltage

2.7

5

18

V

Common mode input

–16

12

80

V

Operating free-air temperature

–40

25

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

7.4 Thermal Information

INA27xA-Q1

UNIT

D (SOIC)

8 PINS

Junction-to-ambient thermal resistance

78.8

°C/W

Junction-to-case (top) thermal resistance

71.6

°C/W

Junction-to-board thermal resistance

68.2

°C/W

Junction-to-top characterization parameter

22

°C/W

Junction-to-board characterization parameter

67.6

°C/W

Junction-to-case (bottom) thermal resistance

n/a

°C/W

(1)

RTI = referred to input

(2)

Initial resistor variation is ±30% with an additional –2200-ppm/°C temperature coefficient.

7.5 Electrical Characteristics

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Input

Full-scale input voltage

0.15

Gain

V

Common-mode input voltage

–16

80

V

CMRR

Common-mode rejection

80

120

dB

100

120

±0.5

2.5

mV

±3

Input offset voltage

temperature coefficient

2.5

20

μV/°C

PSR

Offset voltage power-supply

rejection

to +125°C

5

100

μV/V

Input bias current

±8

±16

μA

PRE OUT pin

96

k

Ω

Buffer input bias current

–50

nA

Buffer input bias current

temperature coefficient

±0.3

nA/°C