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PUMD16 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PUMD16 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 2003 Oct 22 3 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 22 k Ω, R2 = 47 kΩ PUMD16 ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION PUMD16 − plastic surface mounted package; 6 leads SOT363 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 6V VI input voltage TR1 positive − +40 V negative −−7V VI input voltage TR2 positive − +7 V negative −−40 V IO output current (DC) − 100 mA ICM peak collector current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW SYMBOL PARAMETER CONDITIONS VALUE UNIT Per transistor Rth j-a thermal resistance from junction to ambient Tamb ≤ 25 °C; note 1 625 K/W Per device Rth j-a thermal resistance from junction to ambient Tamb ≤ 25 °C; note 1 416 K/W |
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