2003 Oct 22

3

Philips Semiconductors

Product specification

NPN/PNP resistor-equipped transistors;

R1 = 22 k

Ω, R2 = 47 kΩ

PUMD16

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.

TYPE NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

PUMD16

−

plastic surface mounted package; 6 leads

SOT363

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

collector-base voltage

open emitter

−

50

V

collector-emitter voltage

open base

−

50

V

emitter-base voltage

open collector

−

6V

input voltage TR1

positive

−

+40

V

negative

−−7V

input voltage TR2

positive

−

+7

V

negative

−−40

V

output current (DC)

−

100

mA

peak collector current

−

100

mA

total power dissipation

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

Per device

total power dissipation

−

300

mW

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Per transistor

thermal resistance from junction to ambient

625

K/W

Per device

thermal resistance from junction to ambient

416

K/W