IO1

IO2

IO3

IO4

GND

TPD4E1B06

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SLVSBQ8C – DECEMBER 2012 – REVISED JULY 2014

8 Detailed Description

8.1 Overview

The TPD4E1B06 is a 4-channel bi-directional Transient Voltage Suppressor (TVS) diode array. This device

features ultra low leakage current (0.5 nA) for precision analog measurements. The ±12 kV contact and ±15 kV

air gap ESD protection exceeds IEC 61000-4-2 level 4 requirements. The TPD4E1B06's 0.7 pF line capacitance

makes it suitable for precision analog, USB2.0, Ethernet, SATA, LVDS, and 1394 interfaces.

8.2 Functional Block Diagram

8.3 Feature Description

The TPD4E1B06 is a 4-channel bi-directional Transient Voltage Suppressor (TVS) diode array. This device

features ultra low leakage current (0.5 nA) for precision analog measurements. The ±12 kV contact and ±15 kV

air gap ESD protection exceeds IEC 61000-4-2 level 4 requirements. The TPD4E1B06's 0.7 pF line capacitance

makes it suitable for precision analog, USB2.0, Ethernet, SATA, LVDS, and 1394 interfaces.

8.3.1 Ultra low Leakage Current 0.5 nA (Max)

TPD4E1B06 ultra-low leakage current supports long battery life and allows for precision analog measurements.

8.3.2 Transient Protection for 4 I/O Lines

The four I/O pins of TPD4E1B06 can withstand ESD events up to ±12 kV contact and ±15 kV air gap per

IEC61000-4-2.

8.3.3 I/O Capacitance 0.7 pF (Typ)

TPD4E1B06 I/O pins present an ultra-low 0.7 pF capacitance to the protected signal lines, making it suitable for

a wide range of applications.

8.3.4 Bi-directional TVS diode array

TPD4E1B06 diode array structure uses back to back diode topology to accommodate bi-directional signaling

between –5.5 V and 5.5 V.

8.3.5 Low ESD Clamping Voltage

TPD4E1B06 clamps ESD events to a safe level to protect system components.

8.4 Device Functional Modes

to ground via the internal diode network. Once the voltages on the protected line fall below the trigger levels of

TPD4E1B06 (usually within 10’s of nano-seconds) the device reverts to passive.

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