BUK7526-100B datasheet(5/15 Pages) PHILIPS

Part #	BUK7526-100B

Description	TrenchMOS standard level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

BUK75/7626-100B

TrenchMOS™ standard level FET

Product data

Rev. 01 — 11 April 2003

5 of 15

9397 750 11238

5.

Characteristics

Table 4:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source breakdown

voltage

ID = 0.25 mA; VGS =0V

Tj =25 °C

100

-

V

Tj = −55 °C89

-

V

VGS(th)

gate-source threshold voltage ID = 1 mA; VDS =VGS;

Figure 9

Tj =25 °C2

3

4

V

Tj = 175 °C1

-

V

Tj = −55 °C

-

4.4

V

IDSS

drain-source leakage current

VDS = 100 V; VGS =0V

Tj =25 °C

-

0.02

1

µA

Tj = 175 °C

-

500

µA

IGSS

gate-source leakage current

VGS = ±20 V; VDS = 0 V

-

2

100

nA

RDSon

drain-source on-state

resistance

VGS =10V; ID =25A;

Figure 7 and 8

Tj =25 °C

-

22

26

m

Ω

Tj = 175 °C-

-

65

m

Ω

Dynamic characteristics

Qg(tot)

total gate charge

VGS =10V; VDD =80V;

ID =25A; Figure 14

-38

-

nC

Qgs

gate-source charge

-

9

-

nC

Qgd

gate-drain (Miller) charge

-

13

-

nC

Ciss

input capacitance

VGS =0V; VDS =25V;

f = 1 MHz; Figure 12

-

2168

2891

pF

Coss

output capacitance

-

238

286

pF

Crss

reverse transfer capacitance

-

102

140

pF

td(on)

turn-on delay time

VDD = 30 V; RL = 1.2 Ω;

VGS =10V; RG =10 Ω

-21

-

ns

tr

rise time

-

40

-

ns

td(off)

turn-off delay time

-

47

-

ns

tf

fall time

-

19

-

ns

Ld

internal drain inductance

from drain lead 6 mm from

package to centre of die

-

4.5

-

nH

from contact screw on

mounting base to centre of

die SOT78

-

3.5

-

nH

from upper edge of drain

mounting base to centre of

die SOT404

-

2.5

-

nH

Ls

internal source inductance

from source lead 6 mm from

package to source bond pad

-

7.5

-

nH

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