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XTR101BG Datasheet(PDF) 7 Page - Texas Instruments |
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XTR101BG Datasheet(HTML) 7 Page - Texas Instruments |
7 / 26 page XTR101 SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004 www.ti.com 7 INSTALLATION AND OPERATING INSTRUCTIONS BASIC CONNECTION See Figure 1 for the basic connection of the XTR101. A difference voltage applied between input pins 3 and 4 will cause a current of 4-20mA to circulate in the two-wire output loop (through RL, VPS, and D1). For applications requiring moderate accuracy, the XTR101 operates very cost-effectively with just its internal drive transistor. For more demanding applications (high accuracy in high gain), an external NPN transistor can be added in parallel with the internal one. This keeps the heat out of the XTR101 package and minimizes thermal feedback to the input stage. Also, in such applications where the eIN full-scale is small (< 50mV) and RSPAN is small (< 150Ω), caution should be taken to consider errors from the external span circuit plus high amplification of offset drift and noise. OPTIONAL EXTERNAL TRANSISTOR The optional external transistor, when used, is connected in parallel with the XTR101 internal transistor. The purpose is to increase accuracy by reducing heat change inside the XTR101 package as the output current spans from 4-20mA. Under normal operating conditions, the internal transistor is never completely turned off, as shown in Figure 2. This maintains frequency stability with varying external transistor characteristics and wiring capacitance. The actual current sharing between internal and external transistors is dependent on two factors: 1. relative geometry of emitter areas, and 2. relative package dissipation (case size and thermal conductivity). For best results, the external device should have a larger base-emitter area and smaller package. It will, upon turn-on, take about [0.95(IO − 3.3mA)]mA. However, it will heat faster and take a greater share after a few seconds. 1mA 10 7 1mA 11 Q EXT 23.6V, 377mW 12 B 210 Ω 52.6 Ω 1.5mA Quiescent 18mA 20mA R L 250 Ω Short−Circuit Worst−Case V PS 40V 20mA 4mA 16mA 750 Ω 12V, 200mW Q INT 18mW +V CC 8 I OUT NOTES: (1) An external transistor is used in the manufacturing test circuit for testing electrical specifications. (2) This resistor is required for the 2N2222 with V PS > 24V to limit power dissipation. 3.47V, 60mW XTR101 3.5mA 0.95V, 17mW E (2) 2N2222 (1) 2mA 9 0.5mA Type 2N4922 TIP29B TIP31B Package TO−225 TO−220 TO−220 Other Suitable Types Figure 2. Power Calculation of the XTR101 with an External Transistor |
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