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HV5308PJ-B-G Datasheet(PDF) 4 Page - Microchip Technology |
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HV5308PJ-B-G Datasheet(HTML) 4 Page - Microchip Technology |
4 / 17 page HV5308 / HV5408 DS20005425A-page 4 2015 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS† Supply voltage, VDD .................................................................................................................................. -0.5V to +16V Supply voltage, VPP................................................................................................................................... -0.5V to +90V Logic input levels................................................................................................................................ -0.5V to VDD+0.5V Ground current1 ....................................................................................................................................................... 1.5A Continuous total power dissipation2 .................................................................................................................. 1200mW Operating temperature range.................................................................................................................. -40°C to +85°C Storage temperature range ................................................................................................................... -65°C to +150°C 1: Duty cycle is limited by the total power dissipated in the package. 2: For operation above 25°C ambient derate linearly to maximum operating temperature at 20mW/°C. Note 1: L to H = Low to High; H to L = High to Low. † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Electrical Specifications: VPP = 60V, VDD = 12V, TA = 25°C Parameter Symbol Min Max Units Conditions DC Characteristics VPP supply current IPP -0.5 mA HVOUTPUTS high to low IDD supply current (quiescent) IDDQ - 100 µA All inputs = VDD or GND IDD supply current (operating) IDD -15 mA VDD= VDD max, fCLK= 8.0MHz High level logic input current IIH -1.0 µA VIN= VDD Low level logic input current IIL --1.0 µA VIN= 0 High level output voltage HVOUT VOH 52 - V IOH= -20mA, -40 to 85°C IOH= -15mA, -55 to 125°C Data out 10.5 - V IO= -100µA Low level output voltage HVOUT VOL -8.0 V IOL= 20mA, -40 to 85°C IOL= 15mA, -55 to 125°C Data out - 1.0 V IO= 100µA HV output clamp diode voltage VOC --1.5 V IOL= -100mA AC Characteristics Clock frequency fCLK - 8.0 MHz --- Clock width, High or Low tWL or tWH 62 - ns --- Setup time before CLK rises tSU 25 - ns --- Hold time after CLK rises tH 10 - ns --- Data output delay after L to H CLK tDLH (Data) - 110 ns CL= 15pF, (Note 1) Data output delay after H to L CLK tDHL (Data) - 110 ns CL= 15pF, (Note 1) LE delay after L to H CLK tDLE 50 - ns (Note 1) Width of LE pulse tWLE 50 - ns --- LE setup time before L to H CLK tSLE 50 - ns (Note 1) Delay from LE to HVOUT, L to H tON - 500 ns (Note 1) Delay from LE to HVOUT, H to L tOFF - 500 ns (Note 1) |
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