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TMS3705CDRQ1 Datasheet(PDF) 7 Page - Texas Instruments |
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TMS3705CDRQ1 Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 30 page  7 TMS3705 www.ti.com SCBS881C – JANUARY 2010 – REVISED APRIL 2016 Submit Documentation Feedback Product Folder Links: TMS3705 Specifications Copyright © 2010–2016, Texas Instruments Incorporated (1) Specified by design (2) Specified by design; functional test done for input voltage of 90 mVpp. (3) Band-pass filter tested at three different frequencies: fmid = 134 kHz and gain > 30 dB; flow = 24 kHz; fhigh = 500 kHz. Attenuation < –3 dB (reference = measured gain at fmid = 134 kHz). (4) Internal resistance switched on and much lower than external SENSE resistance. 4.4 Electrical Characteristics VDD = 4.5 V to 5.5 V, fosc = 4 MHz, F_SEL = high, over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Power Supply (VDD, VSS/VSSB, VDDA, VSSA) IDD Supply current Sum of supply currents in Charge phase, without antenna load 8 20 mA ISleep Supply current, Sleep state Sum of supply currents in Sleep state, without I/O currents 0.015 0.2 mA Oscillator (OSC1, OSC2) gosc Transconductance fosc = 4 MHz, 0.5 Vpp at OSC1 0.5 2 5 mA/V Cin Input capacitance at OSC1(1) 10 pF Cout Output capacitance at OSC2(1) 10 pF Logic Inputs (TXCT, F_SEL, OSC1) Rpullup Pullup resistance TXCT 120 500 k Ω F_SEL 10 500 Logic Outputs (SCIO, D_TST) VOH High-level output voltage 0.8 VDD V VOL Low-level output voltage 0.2 VDD V Full-Bridge Outputs (ANT1, ANT2) ΣRds_on Sum of drain-source resistances Full-bridge N-channel and P-channel MOSFETs at driver current Iant = 50 mA 7 14 Ω Duty cycle P-channel MOSFETs of full bridge 38% 40% 42% ton1/ton2 Symmetry of pulse durations for the P ‑channel MOSFETs of full bridge 96% 104.5% Ioc Threshold for overcurrent protection 220 1100 mA toc Switch-off time of overcurrent protection Short to ground with 3 Ω 0.25 10 µs tdoc Delay for switching on the full bridge after an overcurrent 2 2.05 2.1 ms Ileak Leakage current 1 µA Analog Module (SENSE, SFB, A_TST) ISENSE Input current SENSE, In charge phase –2 2 mA VDCREF/ VDD DC reference voltage of RF amplifier, related to VDD 9.25% 10% 11% GBW Gain-bandwidth product of RF amplifier At 500 kHz with external components to achieve a voltage gain of minimum 4 ‑mVpp and 5-mVpp input signal 2 MHz φO Phase shift of RF amplifier At 134 kHz with external components to achieve a voltage gain of 5-mVpp and 20 ‑mVpp input signal 16 ° Vsfb Peak-to-peak input voltage of band pass at which the limiter comparator should toggle(2) At 134 kHz (corresponds to a minimal total gain of 1000) 5 mV flow Lower cut-off frequency of band-pass filter(3) 24 60 100 kHz fhigh Higher cut-off frequency of band-pass filter(3) 160 270 500 kHz ΔVhys Hysteresis of limiter A_TST pin used as input, D_TST pin as output, offset level determined by band-pass stage 25 50 135 mV Diagnosis (SENSE) Idiag Current threshold for operating antenna(4) 80 240 µA |
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