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BDY23 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part No. BDY23
Description  NPN SILICON TRANSISTORS, DIFFUSED MESA
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COMSET SEMICONDUCTORS
1/4
BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
BDY23, 180T2
60
BDY24, 181T2
90
VCEO
Collector-Emitter Voltage
BDY25, 182T2
140
V
BDY23, 180T2
60
BDY24, 181T2
100
VCBO
Collector-Base Voltage
BDY25, 182T2
200
V
VEBO
Emitter-Base Voltage
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
10
V
IC
Collector Current
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
6
A
IB
Base Current
BDY23, 180T2
BDY24, 181T2
BDY25, 181T2
3
A
PTOT
Power Dissipation
@ TC = 25°
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
87.5
Watts
TJ
Junction Temperature
TStg
Storage Temperature
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
200
-65 to +200
°C
LF Large Signal Power Amplification
High Current Fast Switching
NPN SILICON TRANSISTORS, DIFFUSED MESA




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