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UPA1914 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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UPA1914 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1998, 1999 MOS FIELD EFFECT TRANSISTOR µPA1914 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET Document No. D13810EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP(K) Printed in Japan The mark ! ! ! ! shows major revised points. DESCRIPTION The µPA1914 is a switching device which can be driven directly by a 4 V power source. The µPA1914 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 57 m Ω MAX. (VGS = –10 V, ID = –2.5 A) RDS(on)2 = 86 m Ω MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)3 = 96 m Ω MAX. (VGS = –4.0 V, ID = –2.5A) ORDERING INFORMATION PART NUMBER PACKAGE µPA1914TE SC-95 (Mini Mold Thin Type) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS –30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±4.5 A Drain Current (pulse) Note1 ID(pulse) ±18 A Total Power Dissipation PT1 0.2 W Total Power Dissipation Note2 PT2 2W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR-4 Board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit : mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 –0.06 0.95 12 3 65 4 1.9 2.9 ±0.2 0.32 +0.1 –0.05 0.95 1, 2, 5, 6 : Drain 3 : Gate 4 : Source EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Marking: TF Gate Drain |
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