The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

©

1998, 1999

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DATA SHEET

Document No. D13810EJ2V0DS00 (2nd edition)

Date Published May 2001 NS CP(K)

Printed in Japan

The mark

!

!

!

! shows major revised points.

DESCRIPTION

The

µPA1914 is a switching device which can be driven

directly by a 4 V power source.

The

µPA1914 features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

FEATURES

• Can be driven by a 4 V power source

• Low on-state resistance

ORDERING INFORMATION

PART NUMBER

PACKAGE

µPA1914TE

SC-95 (Mini Mold Thin Type)

Drain to Source Voltage

–30

V

Gate to Source Voltage

±20

V

Drain Current (DC)

±4.5

A

Drain Current (pulse)

Note1

±18

A

Total Power Dissipation

0.2

W

Total Power Dissipation

Note2

2W

Channel Temperature

150

°C

Storage Temperature

–55 to +150

°C

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1 %

2. Mounted on FR-4 Board, t

≤ 5 sec.

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

PACKAGE DRAWING (Unit : mm)

0.65

0.9 to 1.1

0 to 0.1

0.16

+0.1

–0.06

0.95

12

3

65

4

1.9

2.9 ±0.2

0.32

+0.1

–0.05

0.95

1, 2, 5, 6 : Drain

3

: Gate

4

: Source

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Marking: TF

Gate

Drain