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TPS54350PWP Datasheet(PDF) 4 Page - Texas Instruments |
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TPS54350PWP Datasheet(HTML) 4 Page - Texas Instruments |
4 / 27 page TPS54350 SLVS456C − OCTOBER 2003 − REVISED OCTOBER 2004 www.ti.com 4 ELECTRICAL CHARACTERISTICS TJ = –40°C to 125°C, VIN = 4.5 V to 20 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT FEED− FORWARD MODULATOR (INTERNAL SIGNAL) Modulator gain VIN = 12 V, TJ = 25°C 8 V/V Modulator gain variation −25% 25% Minimum controllable ON time (1) 180 ns Maximum duty factor (1) VIN = 4.5 V 80% 86% ERROR AMPLIFIER (VSENSE AND COMP PINS) Error amplifier open loop voltage gain (1) 60 80 dB Error amplifier unity gain bandwidth (1) 1.0 2.8 MHz Input bias current, VSENSE pin 500 nA COMP Output voltage slew rate (symmetric) (1) 1.5 V/ µs ENABLE (ENA PIN) Disable low level input voltage 0.5 V Internal slow-start time (10% to 90%) fs = 250 kHz, RT = ground (1) 4.6 ms Internal slow-start time (10% to 90%) fs = 500 kHz, RT = Hi−Z (1) 2.3 ms Pullup current source 1.8 5 10 µA Pulldown MOSFET II(ENA)=1 mA 0.1 V POWER GOOD (PWRGD PIN) Power good threshold Rising voltage 97% Rising edge delay (1) fs = 250 kHz 4 ms Rising edge delay (1) fs = 500 kHz 2 ms Output saturation voltage Isink = 1 mA, VIN > 4.5 V 0.05 V PWRGD Output saturation voltage Isink = 100 µA, VIN = 0 V 0.76 V PWRGD Open drain leakage current Voltage on PWRGD = 6 V 3 µA CURRENT LIMIT Current limit VIN = 12 V 3.3 4.5 6.5 A Current limit Hiccup Time (1) fs = 500 kHz 4.5 ms THERMAL SHUTDOWN Thermal shutdown trip point (1) 165 _C Thermal shutdown hysteresis (1) 7 _C LOW SIDE MOSFET DRIVER (LSG PIN) Turn on rise time, (10%/90%) (1) VIN = 4.5 V, Capacitive load = 1000 pF 15 ns Deadtime (1) VIN = 12 V 60 ns Driver ON resistance VIN = 4.5 V sink/source 7.5 Ω Driver ON resistance VIN = 12 V sink/source 5 Ω OUTPUT POWER MOSFETS (PH PIN) Phase node voltage when disabled DC conditions and no load, ENA = 0 V 0.5 V Voltage drop, low side FET and diode VIN = 4.5 V, Idc = 100 mA 1.13 1.42 V Voltage drop, low side FET and diode VIN = 12 V, Idc = 100 mA 1.08 1.38 V rDS(ON), high side power MOSFET switch(2) VIN = 4.5 V, BOOT−PH = 4.5 V, IO = 0.5 A 150 300 m Ω rDS(ON), high side power MOSFET switch(2) VIN = 12 V, BOOT−PH = 8 V, IO = 0.5 A 100 200 m Ω (1) Ensured by design, not production tested. (2) Resistance from VIN to PH pins. |
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