SI4965DY-T1 datasheet(2/4 Pages) VISHAY

Part #	SI4965DY-T1

Description	Dual P-Channel 1.8-V (G-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si4965DY

Vishay Siliconix

www.vishay.com

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Document Number: 70826

S-31989—Rev. B, 13-Oct-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 mA

-0.45

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = -8 V, VGS = 0 V

-1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = -8 V, VGS = 0 V, TJ = 70_C

-5

mA

On-State Drain Currenta

ID(on)

VDS w -5 V, VGS = -4.5 V

-20

A

VGS = -4.5 V, ID = -8.0 A

0.0175

0.021

Drain-Source On-State Resistancea

rDS(on)

VGS = -2.5 V, ID = -7.0 A

0.022

0.027

W

DS(on)

VGS = -1.8 V, ID = -5.8 A

0.031

0.040

Forward Transconductancea

gfs

VDS = -5 V, ID = -8.0 A

27

S

Diode Forward Voltagea

VSD

IS = -1.7 A, VGS = 0 V

-1.2

V

Dynamicb

Total Gate Charge

Qg

36

55

Gate-Source Charge

Qgs

VDS = -4 V, VGS = -4.5 V, ID = -8.0 A

7.5

nC

Gate-Drain Charge

Qgd

5.0

Turn-On Delay Time

td(on)

35

70

Rise Time

tr

VDD = -4 V, RL = 4 W

45

90

Turn-Off Delay Time

td(off)

VDD = -4 V, RL = 4 W

ID ^ -1 A, VGEN = -4.5 V, RG = 6 W

170

340

ns

Fall Time

tf

90

180

Source-Drain Reverse Recovery Time

trr

IF = -1.7 A, di/dt = 100 A/ms

60

90

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

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