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TLV71712PDQNR3 Datasheet(PDF) 4 Page - Texas Instruments |
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TLV71712PDQNR3 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 28 page 4 TLV717P SBVS176B – OCTOBER 2011 – REVISED APRIL 2016 www.ti.com Product Folder Links: TLV717P Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings At TJ = 25°C, unless otherwise noted. All voltages are with respect to GND. (1) MIN MAX UNIT Voltage Input range, VIN –0.3 6 V Enable range, VEN –0.3 VIN + 0.3 Output range, VOUT –0.3 6 Current Maximum output, IOUT Internally limited Output short-circuit duration Indefinite Continuous total power dissipation, PDISS See Thermal Information Temperature Junction, TJ –55 150 °C Storage junction, Tstg –55 150 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22- C101(2) ±500 6.3 Recommended Operating Conditions over operating junction temperature range (unless otherwise noted) MIN MAX UNIT VIN Input voltage 1.7 5.5 V VOUT Output voltage 1.2 5 V IOUT Output current 0 150 mA VEN Enable pin voltage 0 VIN V TJ Junction temperature –40 85 °C 6.4 Thermal Information THERMAL METRIC TLV717P UNIT DQN (X2SON) 4 PINS RθJA Junction-to-ambient thermal resistance 393.3 °C/W RθJC(top) Junction-to-case(top) thermal resistance 140.3 °C/W RθJB Junction-to-board thermal resistance 330 °C/W ψJT Junction-to-top characterization parameter 6.5 °C/W ψJB Junction-to-board characterization parameter 329 °C/W RθJC(bot) Junction-to-case(bottom) thermal resistance 147.5 °C/W |
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