SI4936 datasheet(3/4 Pages) VISHAY

Part #	SI4936

Description	Dual N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si4936ADY

Vishay Siliconix

Document Number: 71132

S-31989—Rev. B, 13-Oct-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

200

400

600

800

1000

0

6

12

18

24

30

0.6

0.8

1.0

1.2

1.4

1.6

-50

-25

0

25

50

75

100

125

150

0

2

4

6

8

10

0

3

6

9

12

15

0.00

0.02

0.04

0.06

0.08

0

6

12

18

24

30

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 15 V

ID = 5.9 A

ID - Drain Current (A)

VGS = 10 V

ID = 5.9 A

VGS = 10 V

VGS = 4.5 V

Gate Charge

On-Resistance vs. Drain Current

Qg - Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ - Junction Temperature (_C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.00

0.02

0.04

0.06

0.08

0

2468

10

TJ = 150_C

ID = 5.9 A

30

10

1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

TJ = 25_C

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