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7532 Datasheet(PDF) 11 Page - Fairchild Semiconductor |
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7532 Datasheet(HTML) 11 Page - Fairchild Semiconductor |
11 / 15 page 11 Rev. A, October 2003 ©2003 Fairchild Semiconductor Corporation 6. Simulation Convergence The self-heating model was tested under numerous circuit configurations. It was found to be numerically stable. Failure to converge can occur under some large signal simulations if PSPICE’s setup option ABSTOL setting is less than 1µA. UIS simulations [10] were performed on a Dell Latitude CSx having a 500MHz Pen- tium III processor with 256MB of RAM. Windows 2000 was the operating system used with virus scan software enabled. PSPICE Schematics version 9.1 was used. Simulation time results were: - standard model = 7.9s - self-heating model = 13.7s Simulation time will be longer with the self-heating model when significant and rapid junction temperature variation occurs. This is a result of the dynamic interaction from the junction temperature feedback on the MOSFET temperature dependent parame- ters. 7. Future Model Developments Minor inaccuracy is introduced if previously published Fairchild Semiconductor MOS- FET models are modified to become self-heating models, but are well within device parametric tolerance (not demonstrated in this paper). The inaccuracy can be elimi- nated by including the variable T_ABS=25 in the level-1 NMOS MOSFET during device specific model calibration, permitting full compatibility of the model with the new self-heating model. This term was included for the standard MOSFET model calibration of the FDP038AN06A0. Temperature dependency of the self-heating model intrinsic body diode leakage current could be introduced by adding a junction temperature dependent current source across the body diode. 8. Conclusion The self heating PSPICE power MOSFET macro-model provides the next evolution- ary step in circuit simulation accuracy. The inclusion of a thermal model coupled to the temperature sensitive MOSFET electrical parameters results in a self-heating PSPICE MOSFET macro-model which allows increased accuracy during time domain simulations. The effect of temperature change due to power dissipation during time domain simulations can now be modeled. The modeling modification concepts introduced are non-proprietary and may be adapted to MOSFET SPICE models from any manufacturer. A methodology for cali- brating a MOSFET model using parametric data was described. Adherence to the cal- ibration sequence yields a highly accurate model. |
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