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LPC662IM Datasheet(PDF) 2 Page - Texas Instruments |
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LPC662IM Datasheet(HTML) 2 Page - Texas Instruments |
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2 / 20 page  LPC662 Low Power CMOS Dual Operational Amplifier General Description The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input V OS, drift, and broadband noise as well as voltage gain (into 100 k Ω and5kΩ) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW. This chip is built with National’s advanced Double-Poly Silicon-Gate CMOS process. See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features. Applications n High-impedance buffer n Precision current-to-voltage converter n Long-term integrator n High-impedance preamplifier n Active filter n Sample-and-Hold circuit n Peak detector Features n Rail-to-rail output swing n Micropower operation (<0.5 mW) n Specified for 100 k Ω and5kΩ loads n High voltage gain 120 dB n Low input offset voltage 3 mV n Low offset voltage drift 1.3 µV/˚C n Ultra low input bias current 2 fA n Input common-mode includes GND n Operating range from +5V to +15V n Low distortion 0.01% at 1 kHz n Slew rate 0.11 V/µs n Full military temperature range available Application Circuit Howland Current Pump DS010548-23 August 2000 © 2001 National Semiconductor Corporation DS010548 www.national.com |
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