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TLV2344IN Datasheet(PDF) 2 Page - Texas Instruments |
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TLV2344IN Datasheet(HTML) 2 Page - Texas Instruments |
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2 / 43 page  TLV2342, TLV2342Y, TLV2344, TLV2344Y LinCMOS ™ LOW-VOLTAGE HIGH-SPEED OPERATIONAL AMPLIFIERS SLOS194 – FEBRUARY 1997 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 description (continued) Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low input bias currents. These parameters combined with good ac performance make the TLV234x effectual in applications such as high-frequency filters and wide-bandwidth sensors. To facilitate the design of small portable equipment, the TLV234x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical. The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The TLV234x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance. TLV2342Y chip information This chip, when properly assembled, displays characteristics similar to the TLV2342. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C TOLERANCES ARE ±10%. ALL DIMENSIONS ARE IN MILS. + – 1OUT 1IN + 1IN – VDD (8) (6) (3) (2) (5) (1) (7) (4) VDD – /GND + – 2OUT 2IN + 2IN – 59 72 (2) (3) (4) (5) (6) (7) (8) (1) |
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