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S3A Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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S3A Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page 6.9± 0.25 1. 3± 0. 25 7.8± 0. 2 0.25± 0.06 FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified S3D S3G S3J S3K S3M Maximumrecurrent peak reverse voltage VRRM 200 400 600 800 1000 V MaximumRMS voltage VRWS 140 280 420 560 700 V MaximumDC Blocking Voltage VDC 200 400 600 800 1000 V Maximumaverage forw ord rectified current V @ T L=90 OC IF(AV) A Peak forw ard surge current @ T L = 110°C 8.3ms V single half-sine-w ave superimposed on rated V load(JEDEC Method) IFSM A MaximumInstantaneous forw ard voltage at 3.0 A VF V MaximumDC reverse current @T A=25 oC at rated DC blockjing voltage @T A=125 oC Typical junction capacitance (NOTE2) CJ pF R JA R JL Operating junction and storage temperature range TJTSTG oC Terminals:Solder plated, solderable per MIL-STD- 1111750, Method 2026 SURFACE MOUNT RECTIFIERS DO - 214AB(SMC) Polarity: Color band denotes cathode end Weight: 0.007 ounces, 0.21 gram 3.0 IR 50 100.0 2. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas 30.0 oC/W Typical thermal resitance (NOTE3) 125.0 1.15 -55--------+150 1.0 53.0 16.0 NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0 Volts 100 35 70 Plastic package has underwriters laboratory 111 flammability classification 94V-0 100 For surface mounted applications 50 S3B UNITS Glass passivated chip junction S3A --- S3M 111REVERSE VOLTAGE: 50 --- 1000 V CURRENT: 3.0 A Built-in strain relief,ideal for automated placement Case:JEDEC DO-214AB,molded plastic over 1111passivated chip High temperature soldering: 111 260 oC/10 seconds at terminals Low profile package S3A Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
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