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MMBD4448HCDW Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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MMBD4448HCDW Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
2 / 3 page Surface Mount Fast Switching Diodes MMBD4448HCQW/AQW/ADW/CDW/SDW/TW ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR=100μA 80 - V Average reverse current IR VR=70V VR=75V,Tj=150℃ VR=25V,Tj=150℃ VR=20V - - - - 100 50 30 25 nA uA uA nA Forward voltage VF IF=5.0mA IF=10mA IF=100mA IF=150mA 0.62 - - - 0.72 0.855 1.0 1.25 V Total Capacitance CT VR=6V,f=1.0MHz - 3.5 pF Reverse Recovery time trr IF=5mA, VR=6V - 4.0 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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