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MMBD4448DW Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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MMBD4448DW Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
2 / 3 page Surface Mount Fast Switching Diodes MMBD4448DW ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR=10μA 75 V Forward voltage VF IF=5.0mA IF=10mA IF=50mA IF=150mA 0.62 0.720 0.855 1.0 1.25 V Reverse current IR VR=75V VR=75V,Tj=150℃ VR=25V,Tj=150℃ VR=20V 2.5 50 30 25 μA μA μA nA Total Capacitance CT VCB=10V,f=1.0MHz,IE=0 4.0 pF Reverse Recovery time trr IF=IR=10mA,Irr=0.1*IR,RL=100Ω 4.0 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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