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2N7008-GP002 Datasheet(PDF) 1 Page - Supertex, Inc |
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2N7008-GP002 Datasheet(HTML) 1 Page - Supertex, Inc |
1 / 3 page Supertex inc. Supertex inc. www.supertex.com 2N7008 Doc.# DSFP-2N7008 C062813 Features ► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low C ISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain Applications ► Motor controls ► Converters ► Amplifiers ► Switches ► Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description The Supertex 2N7008 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Absolute Maximum Ratings Parameter Value Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Gate-to-source voltage ±30V Operating and storage temperature -55°C to +150°C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. N-Channel Enhancement-Mode Vertical DMOS FETs GATE SOURCE DRAIN TO-92 YY = Year Sealed WW = Week Sealed = “Green” Packaging Si 2N 7008 YYWW TO-92 Product Marking Pin Configuration Package may or may not include the following marks: Si or Ordering Information Part Number Package Option Packing 2N7008-G TO-92 1000/Bag 2N7008-G P002 TO-92 2000/Reel 2N7008-G P003 TO-92 2000/Reel 2N7008-G P005 TO-92 2000/Reel 2N7008-G P013 TO-92 2000/Reel 2N7008-G PO14 TO-92 2000/Reel Product Summary BV DSX/BVDGS R DS(ON) (max) I D(ON) 60V 7.5 Ω 500mA -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Typical Thermal Characteristics Package θ ja TO-92 132OC/W * Mounted on FR4 board; 25mm x 25mm x 1.57mm |
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