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MBRF2080CT Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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MBRF2080CT Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page  1 3 2 PIN 10.2± 0.2 4.0± 0.3 2.6± 0.15 1.4± 0.1 0.6± 0.1 4.5± 0.2 3.1 +0.2 -0.1 2.6± 0.2 0.6± 0.1 FEATURES MECHANICAL DATA Position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. UNITS Maximumrecurrent peak reverse voltage VRRM V Maximumworking peak reverse voltage VRWM V MaximumDC blocking voltage VDC V Maximumaverage forw ard total device1 111rectified current @ T C = 133 IF(AV) A Peak forw ard surge current 8.3 ms single half b sine-wave superimposed on rated load IFSM A Maximumforward (I F=10A,TC=25 ) voltage per leg (I F=10A,TC=125 ) (NOTE1) (I F=20A,TC=25 ) (I F=20A,TC=125 ) Maximumreverse current @T A=25 at rated DCblocking voltage @T A=125 Maximum junction capacitance (NOTE2) CT pF Operating junction temperature range TJ Storage temperature range TSTG 2. VR=5VDC,(test signal range 100KHz to 1MHz 63 70 70 80 150.0 ITO-220AB 20.0 90 100 49 56 70 80 90 100 MBRF2070CT MBRF2080CT MBRF2090CT MBRF20100CT mA 0. 70 0. 95 0. 85 0.1 NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle. - 55 ---- + 175 - 55 ---- + 150 VOLTAGE RANGE: 70 - 100 V CURRENT: 20 A Metal silicon junction, majoritycarrier conduction. Case:JEDEC ITO-220AB,molded plastic body Terminals: Solderable per MIL-STD-750, 11 Method 2026 DUAL SCHOTTKY RECTIFIERS V 6.0 MBRF2070CT---MBRF20100CT Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequencyinverters, free 111 wheeling, and polarityprotection applications. Polarity: As marked Weight: 0.06 ounce, 1.67 grams High current capacity, low forward voltage drop. 400 VF 0. 85 IR Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
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