1

2

10.2± 0.2

PIN

0.9± 0.1

5.0± 0.1

2.6± 0.2

0.5± 0.1

1.4± 0.2

4.5± 0.2

φ 3.8± 0.15

FEATURES

MECHANICAL DATA

Position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unless otherwise specified.

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS Voltage

V

Maximum DC blocking voltage

V

Maximum average forw ard total device

A

Peak forw ard surge current 8.3ms single half

A

Maximum forw ard

(I

)

voltage

(I

)

(Note 1)

(I

)

(I

)

Maximum reverse current

@T

at rated DC blocking voltage

@T

Maximum thermal resistance (Note2)

/W

Operating junction temperature range

Storage temperature range

2. Thermal resistance from junction to case.

m A

20

30

35

40

45

50

60

90

100

1

0

150

14

21

25

28

32

35

42

63

70

20

30

35

40

45

50

60

90

100

VOLTAGE RANGE: 30 - 100 V

CURRENT: 10 A

Metal silicon junction, m ajority carrier conduction.

Case:JEDEC TO-220A

C,molded plastic body

SCHOTTKY BARRIER RECTIFIERS

High current capacity, low forward voltage drop.

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

-

55 ---- + 150

-

55 ---- + 150

Term inals:Solderable per MIL-STD-750,

1 1

Method 2026

0.1

2.0

TO-220AC

MBR1020---MBR10100

MBR

MBR MBR MBR

MBR

MBR

MBR

MBR

MBR

1020

1

030 1035 1040 1045 1050 1060 1090 10100

Guard ring for over voltage protection.

High surge capacity.

For use in low voltage, high frequency inverters, free

Polarity: As m arked

Weight: 0.069 ounces,1.96 gram

15

6.0

V

0.57

0.84

0.72

0.80

0.80

0.70

0.65

-

0.95

0.95

0.85

0.75

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

Dimensions in millimeters

3)

Diode Semiconductor Korea

www.diode.kr