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SF12G Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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SF12G Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Low cost Low leakage Low forward voltage drop High current capability MECHANICAL DATA Case:JEDEC DO--41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. SF12G SF13G SF14G SF15G SF16G UNITS Maximum recurrent peak reverse voltage VRRM 100 150 200 300 400 V Maximum RMS voltage VRMS 70 105 140 210 280 V Maximum DC blocking voltage VDC 100 150 200 300 400 V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 1.0A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG 50 50.0 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 35 50 1.0 SUPER FAST RECTIFIERS SF11G 50 The plastic material carries U/L recognition 94V-0 VOLTAGE RANGE: 50 --- 400 V CURRENT: 1.0 A DO - 41 3. Thermal resistance f rom junction to ambient. A 30.0 IR IFSM NOTE: 1. Measured with I F=0.5A, IR=1A, Irr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. - 55 ----- + 150 - 55 ----- + 150 35 10 1.25 0.95 15 SF11G --- SF16G A 5.0 Easily cleaned with alcohol,Isopropanol and similar solvents IF(AV) Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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