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HER1060F Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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HER1060F Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page 1 2 PIN 10.2± 0.2 4.0± 0.3 5.0± 0.1 1.4± 0.1 0.6± 0.1 4.5± 0.2 3.1 +0.2 -0.1 2.6± 0.2 0.6± 0.1 FEATURES Low cost Low leakage Low forward voltage drop High current capability MECHANICAL DATA Case:JEDEC ITO-220AC,molded plastic body Terminals: Solderable per MIL-STD-750, Method 2026 Polarity: As marked Weight: 0.056 ounces,1.587 gram Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. HER 1020F HER 1040F HER UNITS Maximum recurrent peak reverse voltage VRRM V Maximum RMS voltage VRMS V Maximum DC blocking voltage VDC V Maximum average forw ard rectified current @T C=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 10 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF θJC /W Operating junction temperature range TJ Storage temperature range TSTG ITO - 220AC 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 1.3 1.7 1.0 40 50 100 150 HER1010F--- HER1060F A 10 Easily cleaned with alcohol,Isopropanol and similar solvents IF(AV) 10 HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE: 100 --- 600 V CURRENT: 10 A 70 140 280 420 The plastic material carries U/L recognition 94V-0 A 3.Thermal resistance junction to ambient. HER 1010F 100 200 400 600 A 200 IR MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS IFSM NOTE: 1. Measured with I F=0.5A, IR=1A, Irr=0.25A. - 55 ---- + 150 100 200 400 600 - 55 ---- + 150 1060F Typical thermal resistance (Note3) R 25 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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